HERA801G - HERA808G
8.0 AMPS. Glass Passivated High Efficient Rectifiers TO-220AC
.185(4.70) .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 .16(4.06) .14(3.56) .56(14.22) .53(13.46) .037(0.94) .027(0.68) 2 .11(2.79) .10(2.54) .055(1.40) .045(1.14)
Features
G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application.
M echanical Data
C ases: TO-220AC Molded plastic E poxy: UL 94V0 rate flame retardant T erminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. W eight: 2.24 grams
.205(5.20) .195(4.95)
.025(0.64) .014(0.35)
PIN 1 PIN 2 CASE
Dimensions in inches and (millimeters)
R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
M aximum Rating and Electrical Characteristics
T ype Number
Maximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375”(9.5mm) Lead Length o @T C = 100 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @8.0A M aximum DC Reverse Current @T A =25 oC at Rated DC Blocking Voltage o @ T A =125 C M aximum Reverse Recovery Time ( Note 1 ) T ypical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) Operating Temperature Range
S ymbol V RRM V RMS V DC I(AV) IFSM VF IR T rr
H ERA HERA HERA HERA HERA HERA HERA HERA 801G 802G 803G 804G 805G 806G 807G 808G
U nits
V V V A
50 35 50
100 70 100
200 140 200
300 210 300
400 280 400
600 420 600
800 1000 560 700 800 1000
8 .0
150 1 .0 1.3 10 400 50 65 2.0 -65 to +150 -65 to +150 80 55
o
A 1.7 V uA uA nS pF C/W
o o
Cj
R θJC
TJ
Storage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate.
C C
Version: A06
RATINGS AND CHARACTERISTIC CURVES (HERA801G THRU HERA808G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT. (A)
20
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT. ( A)
16 12 8 4 0
Tj=125 0C
100
Tj=75 0C
10
0
50
100
o
150
CASE TEMPERATURE. ( C)
PEAK FORWARD SURGE CURRENT. (A)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
150
8.3ms Single Half Sine Wave JEDEC Method
1
Tj=25 0C
120 90 60 30
0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FIG.5- TYPICAL FORWARD CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT. (A)
30 10
HE RA 80 1G ~H ER A8 04 G
0
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
180 150
3 1
R HE
A8
05
G
HE
RA
80
~ 6G
HE
RA
80
8G
CAPACITANCE.(pF)
120 90
HE RA
0.3 0.1
80
1G
ER 60 HER A8 A8 05 06 G G~ HE 30 RA 80 8G 0 1 2 5 10 20
~H
0.03 0.01 0.4
50
100
200
500
1000
0.6
REVERSE VOLTAGE. (V)
0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V)
1.6
1.8
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A
(+) 50Vdc (approx) (-)
NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms
-1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm
Version: A06
