HERAF1003G

HERAF1001G - HERAF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) .112(2.85) .100(2.55) Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .030(0.76) .020(0.50) .055(1.4) .043(1.1) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260oC/10 seconds 0.25”,(6.35mm) from case. Mounting torque : 5 in – 1bs. max. Weight: 2.24 grams 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Symbol VRRM VRMS VDC HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G Units V V V A A Maximum DC Blocking Voltage Maximum Average Forward Rectified I(AV) Current @TC =100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated IFSM Load (JEDEC method ) Maximum Instantaneous Forward Voltage VF 1.0 @10.0A Maximum DC Reverse Current o IR @TA=25 C at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Trr 50 Typical Junction Capacitance ( Note 2 ) Cj 80 Typical Thermal Resistance (Note 3) RθJC Operating Temperature Range TJ -65 Storage Temperature Range TSTG -65 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 10 600 420 600 800 1000 560 700 800 1000 150 1.3 10 400 80 60 2.0 to +150 to +150 1.7 V uA uA nS pF o C/W o C o C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERAF1001G THRU HERAF1008G) AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 12 10 8 6 4 0 0 50 CASE TEMPERATURE. ( C) o FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) Tj=125 0C 100 10 Tj=25 0C 100 150 PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 120 90 60 30 0 Tj=25 0C 8.3ms Single Half Sine Wave JEDEC Method 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT. (A) 10 04 1 2 5 10 20 50 100 G 30 10 1G AF NUMBER OF CYCLES AT 60Hz ER ~H 00 F1 RA JUNCTION CAPACITANCE.(pF) HE 0.3 0.1 90 HE RA 60 30 0 1 RA F1 00 1G ~H E F1 00 6G ~H E RA F1 00 5G RA F1 00 8G 0.03 0.01 0.4 2 5 10 20 50 100 200 500 1000 0.6 0.8 HE 120 RA F1 1.0 00 150 6G 1.0 HE ~H ER 1.2 AF 3.0 10 08 FIG.4- TYPICAL JUNCTION CAPACITANCE G H A ER F1 00 5G 1.4 1.6 1.8 REVERSE VOLTAGE. (V) FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06