HERAF1007G

HERAF1007G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HERAF1007G - 10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Co...

  • 数据手册
  • 价格&库存
HERAF1007G 数据手册
CREAT BY ART HERAF1001G - HERAF1008G 10.0AMPS. Isolated Glass Passivated High Efficient Rectifiers ITO-220AC Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: ITO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 ℃/10 secnods/0.25", (6.35mm) from case Mounting torque: 5 in-lbs. max Weight: 1.74 grams Dimensions in inches and (millimeters) Marking Diagram HERAF100XG G Y WW = Specific Device Code = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @ 10 A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A=25 ℃ @ T A=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθJC TJ TSTG HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G 50 100 200 300 400 600 800 1000 35 50 70 100 140 200 210 300 10 150 1.0 10 400 50 80 2.0 - 65 to + 150 - 65 to + 150 80 60 1.3 1.7 280 400 420 600 560 800 700 1000 Units V V V A A V uA uA nS pF O Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle C/W O O C C Note 2: Reverse Recovery Test Conditions: I F=0.5A, I R=1.0A, I RR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E12 RATINGS AND CHARACTERISTIC CURVES (HERAF1001G THRU HERAF1008G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 12 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD CURRENT (A) FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 10 8 6 4 2 0 0 50 100 150 CASE TEMPERATURE (oC) TA=125℃ 100 10 TA=25℃ 1 0.1 150 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT (A) 120 90 60 30 0 1 TA=25℃ 8.3mS Single Half Sine Wave JEDEC Method FIG. 5- TYPICAL FORWARD CHARACTERISRICS 100 HERAF1001G-04G INSTANTANEOUS FORWARD CURRENT (A) 10 NUMBER OF CYCLES AT 60 Hz 100 10 HERAF1005 1 FIG. 4- TYPICAL JUNCTION CAPACITANCE 180 JUNCTION CAPACITANCE (pF) 0.1 150 120 90 60 30 0 1 10 100 1000 REVERSE VOLTAGE (V) HERAF1001G-05G HERAF1006G-08G 0.01 0.4 HERAF1006G-08G 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 1.6 1.8 Version:E12
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