HERAF1606G

HERAF1601G - HERAF1608G Isolated 16.0 AMPS. Glass Passivated High Efficient Rectifiers .185(4.7) .173(4.4) .124(3.16) .118(3.00) ITO-220AC .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) Features Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. .112(2.85) .100(2.55) .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .030(0.76) .020(0.50) Mechanical Data Cases: ITO-220AC molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: o 260 C/10 seconds 0.25”,(6.35mm) from case. Mounting torque : 5 in – 1bs. max. W eight: 2.24 grams .055(1.4) .043(1.1) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol HERAF HERAF HERAF Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TC =100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @16.0A Maximum DC Reverse Current @TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Maximum Ratings and Electrical Characteristics 1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G HERAF HERAF HERAF HERAF HERAF Units V V V A A VRRM VRMS VDC I(AV) IFSM VF IR Trr 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 16 600 420 600 800 1000 560 700 800 1000 250 1.0 1.3 10 400 50 150 2.0 80 110 1.7 V uA uA nS pF o C/W o C o C Cj RθJC Notes: TJ -65 to +150 TSTG -65 to +150 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D. C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERAF1601G THRU HERAF1608G) AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 20 16 12 8 4 0 0 50 CASE TEMPERATURE. ( C) o FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) Tj=125 0C 100 10 100 150 Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 250 Tj=25 0C 8.3ms Single Half Sine Wave JEDEC Method 1 200 150 100 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 50 0 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) 10 FIG.4- TYPICAL JUNCTION CAPACITANCE 300 JUNCTION CAPACITANCE.(pF) 250 200 150 100 50 0 1 2 5 10 20 50 100 200 500 1000 REVERSE VOLTAGE. (V) HE RA F1 60 1G ~H HE ER RA AF F1 16 60 05 6G G ~H ER AF 16 08 G Tj=25 0C 1.0 0.3 0.1 0.03 0.01 0.4 HE 0.6 RA F1 3.0 60 1G ~H ER AF HE 16 04 RA G F1 HE 60 RA 6G F1 ~H ER 60 5G AF 16 08 G 1 2 5 10 20 50 100 30 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06