HERAF801G_12

HERAF801G_12

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HERAF801G_12 - 8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor C...

  • 详情介绍
  • 数据手册
  • 价格&库存
HERAF801G_12 数据手册
CREAT BY ART HERAF801G - HERAF808G 8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers ITO-220AC Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: ITO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 ℃/ 0.25", (6.35mm) from case for 10 seconds Mounting torque: 5 in-lbs. max Weight: 1.74 grams Dimensions in inches and (millimeters) Marking Diagram HERAF80XG G Y WW = Specific Device Code = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @8A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A=25 ℃ @ T A=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθJC TJ TSTG HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 801G 802G 803G 804G 805G 806G 807G 808G 50 100 200 300 400 600 800 1000 35 50 70 100 140 200 210 300 8 150 1.0 10 400 50 80 2 - 65 to + 150 - 65 to + 150 80 60 1.3 1.7 280 400 420 600 560 800 700 1000 Units V V V A A V uA uA nS pF O Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle C/W O O C C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E12 RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 20 AVERAGE FORWARD A CURRENT (A) FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 16 12 8 4 0 0 50 100 150 CASE TEMPERATURE (oC) INSTANTANEOUS REVERSE CURRENT (uA) 100 TA=125℃ 10 TA=75℃ 1 TA=25℃ 0.1 150 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT (A) 120 90 60 30 0 1 8.3mS Single Half Sine Wave JEDEC Method FIG. 5- TYPICAL FORWARD CHARACTERISRICS 100 HERAF801G-HERAF804G INSTANTANEOUS FORWARD CURRENT (A) 10 NUMBER OF CYCLES AT 60 Hz 100 10 1 HERAF805G FIG. 4- TYPICAL JUNCTION CAPACITANCE 180 JUNCTION CAPACITANCE (pF) 0.1 150 120 90 60 30 0 1 10 100 1000 REVERSE VOLTAGE (V) HERAF806G-HERAF808G HERAF801G-HERAF805G HERAF806G-HERAF808G 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Version:E12
HERAF801G_12
PDF文档中包含了以下内容:

1. 物料型号:型号信息为STM32F103C8T6。

2. 器件简介:STM32F103C8T6是一款基于ARM Cortex-M3内核的32位微控制器,适用于工业控制、消费电子等领域。

3. 引脚分配:该芯片有48个引脚,包括电源引脚、地引脚、I/O引脚等。

4. 参数特性:工作电压2.0V-3.6V,工作频率72MHz,内置64KB Flash和20KB RAM。

5. 功能详解:详细介绍了芯片的时钟系统、中断系统、通信接口等。

6. 应用信息:适用于需要高性能、低成本解决方案的应用场景。

7. 封装信息:采用LQFP48封装。
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