HERAF807G

HERAF801G - HERAF808G Isolated 8.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) .112(2.85) .100(2.55) Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .030(0.76) .020(0.50) .055(1.4) .043(1.1) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) M echanical Data C ases: ITO-220AC molded plastic E poxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: o 260 C/ 0.25” (6.35mm) from case for 10 seconds M ounting torque: 5 in – 1bs. Max. W eight: 2.24 grams 2 .100(2.55) .100(2.55) PIN 1 PIN 2 CASE Case Positive Dimensions in inches and (millimeters) M aximum Rating and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375”(9.5mm) Lead Length o @TC =100 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @8.0A M aximum DC Reverse Current @ T A=25 oC at Rated DC Blocking Voltage @ TA=125 oC M aximum Reverse Recovery Time (Note 1) Typical Junction Capacitance O perating Temperature Range ( Note 2 ) Typical Thermal resistance (Note 3) S ymbol V RRM V RMS V DC I(AV) IFSM VF IR Trr HERAF H ERAF H ERAF H ERAF H ERAF H ERAF H ERAF HERAF 801G 802G 803G 804G 805G 806G 807G 808G U nits V V V A 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 600 420 600 800 1000 560 700 800 1000 8.0 150 1.0 1.3 10 400 50 80 2.0 -65 to +150 -65 to +150 80 60 1.7 A V uA uA nS pF o C/W o C o C Cj R θJC TJ S torage Temperature Range TSTG N otes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 20 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 16 12 8 4 0 INSTANTANEOUS REVERSE CURRENT. ( A) 100 Tj=125 0C 10 Tj=75 0C 0 50 CASE TEMPERATURE. ( C) o 100 150 PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 1 Tj=25 0C 120 90 60 30 8.3ms Single Half Sine Wave JEDEC Method 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT. (A) 30 HE RA F8 01 G~ HE RA F8 04 G 0 ER NUMBER OF CYCLES AT 60Hz AF 10 80 5G 1 2 5 10 20 50 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 180 150 3 1 HE RA F8 06 H G~ AF ER CAPACITANCE.(pF) 120 90 HE HE RA F8 0.3 0.1 60 30 0 RA 01G F8 ~H 06 ER G~ AF HE 805 G RA 0.03 0.01 0.4 F8 08 G 1 2 5 10 20 50 100 200 500 1000 0.6 REVERSE VOLTAGE. (V) 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) H 80 8G 1.6 1.8 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06