HERAF808G

HERAF808G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    HERAF808G - 8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Comp...

  • 详情介绍
  • 数据手册
  • 价格&库存
HERAF808G 数据手册
CREAT BY ART HERAF801G - HERAF808G 8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers ITO-220AC Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: ITO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 ℃/ 0.25", (6.35mm) from case for 10 seconds Mounting torque: 5 in-lbs. max Weight: 1.74 grams Dimensions in inches and (millimeters) Marking Diagram HERAF80XG G Y WW = Specific Device Code = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @8A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A=25 ℃ @ T A=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM VF IR Trr Cj RθJC TJ TSTG HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 801G 802G 803G 804G 805G 806G 807G 808G 50 100 200 300 400 600 800 1000 35 50 70 100 140 200 210 300 8 150 1.0 10 400 50 80 2 - 65 to + 150 - 65 to + 150 80 60 1.3 1.7 280 400 420 600 560 800 700 1000 Units V V V A A V uA uA nS pF O Maximum Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle C/W O O C C Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E12 RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 20 AVERAGE FORWARD A CURRENT (A) FIG. 2- TYPICAL REVERSE CHARACTERISTICS 1000 16 12 8 4 0 0 50 100 150 CASE TEMPERATURE (oC) INSTANTANEOUS REVERSE CURRENT (uA) 100 TA=125℃ 10 TA=75℃ 1 TA=25℃ 0.1 150 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) PEAK FORWARD SURGE CURRENT (A) 120 90 60 30 0 1 8.3mS Single Half Sine Wave JEDEC Method FIG. 5- TYPICAL FORWARD CHARACTERISRICS 100 HERAF801G-HERAF804G INSTANTANEOUS FORWARD CURRENT (A) 10 NUMBER OF CYCLES AT 60 Hz 100 10 1 HERAF805G FIG. 4- TYPICAL JUNCTION CAPACITANCE 180 JUNCTION CAPACITANCE (pF) 0.1 150 120 90 60 30 0 1 10 100 1000 REVERSE VOLTAGE (V) HERAF806G-HERAF808G HERAF801G-HERAF805G HERAF806G-HERAF808G 0.01 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) Version:E12
HERAF808G
1. 物料型号: - HERAF801G 至 HERAF808G:这是一系列隔离型玻璃钝化高效整流器的型号。

2. 器件简介: - 这些器件是玻璃钝化芯片结、高效率、低正向电压降(VF)、高电流能力的整流器。它们具有高可靠性和高浪涌电流能力,适用于低电压、高频反相器、自由轮和极性保护应用。

3. 引脚分配: - 封装为ITO-220AC模塑塑料,端子为纯锡镀层、无铅、可焊性符合MIL-STD-202, Method 208标准。

4. 参数特性: - 包括最大重复峰值反向电压(VRRM)、最大RMS电压(VRMS)、最大直流阻断电压(VDc)、最大平均正向整流电流(IF(AV))、峰值正向浪涌电流(IFSM)、最大瞬时正向电压(VF)、最大直流反向电流(IR)、最大反向恢复时间(Trr)和典型结电容(Cj)。

5. 功能详解: - 这些整流器适用于单相、半波、60Hz的电阻性或感性负载。对于电容性负载,需要将电流降低20%。器件符合RoHS标准,采用绿色化合物,具有特定的存储和工作温度范围。

6. 应用信息: - 适用于低电压、高频反相器、自由轮和极性保护等应用。

7. 封装信息: - 封装类型为ITO-220AC模塑塑料,环氧树脂符合UL 94V-0级阻燃等级。尺寸以英寸和毫米表示,端子为纯锡镀层,符合无铅标准。
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