HERF1008G

HERF1001G - HERF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers ITO-220AB Features G lass passivated chip junction. H igh efficiency, Low VF H igh current capability H igh reliability H igh surge current capability F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application. M echanical Data C ase: ITO-220AB molded plastic E poxy: UL 94V0 rate flame retardant T erminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: o 260 C/ 0.25” (6.35mm) from case for 10 seconds. M ounting torque: 5 in – 1bs. max. W eight: 2.24 grams Dimensions in inches and (millimeters) R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% M aximum Ratings and Electrical Characteristics T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current @T C = 1 00 oC P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 5.0A M aximum DC Reverse Current @T A=25 oC at Rated DC Blocking Voltage @ T A=125 oC M aximum Reverse Recovery Time ( Note 1 ) T ypical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) O perating Temperature Range S ymbol HERF HERF HERF HERF HERF HERF HERF HERF Units 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G V RRM V RMS V DC I(AV) IFSM VF IR T rr 50 35 50 100 70 100 200 140 200 300 210 300 400 280 400 10 600 420 600 800 1000 560 700 800 1000 V V V A A 1 25 1 .0 1.3 10 400 50 60 3 .0 -65 to +150 -65 to +150 80 40 1.7 V uA uA nS pF o C/W o C o C Cj R θJC TJ S torage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A N otes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERF1001G THRU HERF1008G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 10 8 6 4 2 0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) 100 Tj=125 0C Tj=75 0C 10 0 50 100 o 150 LEAD TEMPERATURE. ( C) Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 125 100 75 50 25 8.3ms Single Half Sine Wave JEDEC Method 1 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 HE RF 10 01 G ~H ER F1 00 4G H F ER 10 1 2 5 10 20 50 100 INSTANTANEOUS FORWARD CURRENT. (A) 30 10 NUMBER OF CYCLES AT 60Hz 05 G 3 1 FIG.4- TYPICAL JUNCTION CAPACITANCE 240 200 8G 00 F1 ER ~H 6G 00 F1 R HE CAPACITANCE.(pF) 0.3 0.1 160 120 80 40 0 1 2 5 HER F10 06G HE RF 100 1G ~H ER F10 05G 0.03 0.01 0.4 ~HE Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 0 RF1 008 G 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 20 50 100 200 500 1000 FORWARD VOLTAGE. (V) REVERSE VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06