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LL914B

LL914B

  • 厂商:

    TSC

  • 封装:

  • 描述:

    LL914B - 500mW Hermetically Sealed Glass Fast Switching Diodes - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
LL914B 数据手册
LL4448 /LL4148/LL914B Pb RoHS RoHS COMPLIANCE 500mW Hermetically Sealed Glass Fast Switching Diodes MINI MELF Features Fast switching device (TRR< 4.0nS) LL-34( Mini-MELF) package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and terminals are readily solderable RoHS compliant Matte Tin (Sn) lead finish Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range Symbol Pd WIV IFM Io IFSURGE TJ TSTG Symbol IR=100uA IR=5uA Value 500 75 450 150 2 175 -65 to + 200 Min 100 75 0.62 - Units mW V mA mA A O C O C Max Units V 0.72 1.0 1.0 25 5 Electrical Characteristics Type Number Breakdown Voltage Forward Voltage LL4448, LL914B LL4148 LL4448, LL914B Reverse Leakage Current Junction Capacitance BV VF IR IF=5.0mA IF= 10mA IF =100mA VR=20V VR=75V V nA uA pF nS 4.0 Cj 4.0 trr Notes: 1. Reverse Recovery Test Conditions: IF=10mA, VR=6V, RL=100Ω, IRR=1mA VR=0, f=1.0MHz Reverse Recovery Time (Note 1) Version: B07 RATINGS AND CHARACTERISTIC CURVES (LL4448/LL4148/LL914B) 1000 LL4148 IF - Forward Current (mA) 1000 LL4448 IF - Forward Current (mA) 100 Scattering Limit 10 100 Scattering Limit 10 1 Tj = 25 °C 0.1 0 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) 1 Tj = 25 ° C 0.1 0 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage Figure 2. Forward Current vs. Forward Voltage 1000 C D - Diode Capacitance (pF) I R - Reverse Current (nA) 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 V R - Reverse Voltage (V) 100 0.1 1 10 100 V R - Reverse Voltage (V) f = 1 MHz Tj = 25 °C Tj = 25 °C 100 Scattering Limit 10 1 Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Diode Capacitance vs. Reverse Voltage Version: B07
LL914B 价格&库存

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