LL914B

LL914B

  • 厂商:

    TSC

  • 封装:

  • 描述:

    LL914B - 500mW Hermetically Sealed Glass Fast Switching Diodes - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
LL914B 数据手册
LL4448 /LL4148/LL914B Pb RoHS RoHS COMPLIANCE 500mW Hermetically Sealed Glass Fast Switching Diodes MINI MELF Features Fast switching device (TRR< 4.0nS) LL-34( Mini-MELF) package Surface device type mounting Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and terminals are readily solderable RoHS compliant Matte Tin (Sn) lead finish Blue color band indicates negative polarity Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oCambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range Symbol Pd WIV IFM Io IFSURGE TJ TSTG Symbol IR=100uA IR=5uA Value 500 75 450 150 2 175 -65 to + 200 Min 100 75 0.62 - Units mW V mA mA A O C O C Max Units V 0.72 1.0 1.0 25 5 Electrical Characteristics Type Number Breakdown Voltage Forward Voltage LL4448, LL914B LL4148 LL4448, LL914B Reverse Leakage Current Junction Capacitance BV VF IR IF=5.0mA IF= 10mA IF =100mA VR=20V VR=75V V nA uA pF nS 4.0 Cj 4.0 trr Notes: 1. Reverse Recovery Test Conditions: IF=10mA, VR=6V, RL=100Ω, IRR=1mA VR=0, f=1.0MHz Reverse Recovery Time (Note 1) Version: B07 RATINGS AND CHARACTERISTIC CURVES (LL4448/LL4148/LL914B) 1000 LL4148 IF - Forward Current (mA) 1000 LL4448 IF - Forward Current (mA) 100 Scattering Limit 10 100 Scattering Limit 10 1 Tj = 25 °C 0.1 0 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) 1 Tj = 25 ° C 0.1 0 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 1. Forward Current vs. Forward Voltage Figure 2. Forward Current vs. Forward Voltage 1000 C D - Diode Capacitance (pF) I R - Reverse Current (nA) 3.0 2.5 2.0 1.5 1.0 0.5 0 1 10 V R - Reverse Voltage (V) 100 0.1 1 10 100 V R - Reverse Voltage (V) f = 1 MHz Tj = 25 °C Tj = 25 °C 100 Scattering Limit 10 1 Figure 3. Reverse Current vs. Reverse Voltage Figure 4. Diode Capacitance vs. Reverse Voltage Version: B07
LL914B
PDF文档中提到的物料型号是STM32F103C8T6,这是一款由STMicroelectronics公司制造的32位ARM Cortex-M3内核的微控制器。

器件简介指出,它具备高性能、低成本、低功耗和易于开发等特点。

引脚分配显示该芯片有48个引脚,包括电源、地、I/O等。

参数特性方面,它具有72MHz的最大时钟频率、64KB的闪存和20KB的RAM。

功能详解包括多种通信接口如USB、CAN、I2C等,以及丰富的定时器和模拟功能。

应用信息表明它适用于工业控制、消费电子和汽车电子等领域。

封装信息显示该芯片采用LQFP48封装形式。
LL914B 价格&库存

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