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LLDB3

LLDB3

  • 厂商:

    TSC

  • 封装:

  • 描述:

    LLDB3 - 150mW Bi-directional Trigger Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
LLDB3 数据手册
LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode MINI-MELF (LL34) HERMETICALLY SEALED GLASS C Features Designed for through-Hole Device Type Mounting. Hermetically Sealed Glass. All external suface are corrosion resistant and terminals are readily solderable. High reliability glass passivation insuring parameter stability and protection against junction contamination. Pb free version and RoHS compliant A B D Mechanical Data Case :MINI-MELF hermetically sealedglass Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 270 °C/10s Polarity : Indicated by cathode band Weight : 29 ± 2.5 mg Dimensions A B C D Unit (mm) Min 3.30 1.40 0.25 1.25 Max 3.70 1.60 0.40 1.40 Unit (inch) Min Max 0.130 0.146 0.055 0.063 0.010 0.016 0.049 0.055 Ordering Information Part No. Package LLDB3/LLDB3TG L1 MINI-MELF Packing 2.5Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Forward Current Pulse Width= 20μsec Symbol PD IFRM RθJA TJ, TSTG Value 150 2 400 -40 to + 125 Units mW A °C/W °C Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Break-over Voltage Break-over Voltage Symmetry Break-over Current Maxiumn Leakage Current Junction Capacitance Output Voltage Reverse Recovery Time (Note2) C= C= C= VR= 22nF 22nF 22nF 0.5V Symbol VBO + / -VBO IBO IR CJ VO Trr LLDB3TG 32 +/-2 100 10 22.0 5 1.5 LLDB3 32 +/-3 15 Units V V nA μA nF V μs VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω Version : B09 LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Rating and Sharacteristic Curves ΔVF I(BO)F IB I(BO)R Δ IR=10m VB VF VBO VBO IBO VF IB VB IB :Break-Over Voltage at IBO : Test current for voltage VBO : Dynamic impedance at IF : Test current for voltage VB : Voltage at current IB : Test current for voltage VB IF=10m VBO V FIG 1 Admissible Power Dissipation Curve 160 1.08 FIG 2 Typical Junction Capacitance Junction Capacitance (pF) 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 25 50 75 100 125 Power Dissipation (mW) 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Ambient Tempeatature (oC) Reverse Voltage (V) FIG 3 Peak pulse current versus duration Peak pulse current (A) 10 1 0.1 0.01 10 100 Trr (μs) 1000 10000 Version : B09
LLDB3
1. 物料型号: - 型号:LLDB3-LLDB3TG - 封装:MINI-MELF (LL34) HERMETICALLY SEALED GLASS

2. 器件简介: - 台湾半导体生产的小型信号二极管,150mW双向触发二极管,采用MINI-MELF(LL34)全密封玻璃封装。

3. 引脚分配: - 极性由阴极带标识。

4. 参数特性: - 设计用于通孔器件类型安装,全密封玻璃封装,所有外表面耐腐蚀,端子易于焊接。 - 高可靠性玻璃钝化,确保参数稳定性和防止结污染。 - 无铅版本,符合RoHS标准。

5. 功能详解应用信息: - 该二极管具有150mW的功率耗散能力,重复峰值正向电流,热阻(结到环境),结和储存温度范围等参数。 - 电气特性包括断开电压、断开电压对称性、断开电流、最大漏电流、结电容、输出电压和反向恢复时间等。

6. 封装信息: - 封装类型:MINI-MELF全密封玻璃。 - 端子:纯锡镀层,无铅,符合MIL-STD-202, Method 208标准,保证可焊性。 - 尺寸:按照MIL-STD-202, Method 208保证,具体尺寸数值请参考文档中的机械数据表。 - 重量:29 ± 2.5 mg。
LLDB3 价格&库存

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