LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode
Small Signal Diode
MINI-MELF (LL34) HERMETICALLY SEALED GLASS
C
Features
Designed for through-Hole Device Type Mounting. Hermetically Sealed Glass. All external suface are corrosion resistant and terminals are readily solderable. High reliability glass passivation insuring parameter stability and protection against junction contamination. Pb free version and RoHS compliant
A B D
Mechanical Data
Case :MINI-MELF hermetically sealedglass Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 270 °C/10s Polarity : Indicated by cathode band Weight : 29 ± 2.5 mg
Dimensions A B C D
Unit (mm) Min 3.30 1.40 0.25 1.25 Max 3.70 1.60 0.40 1.40
Unit (inch) Min Max 0.130 0.146 0.055 0.063 0.010 0.016 0.049 0.055
Ordering Information
Part No. Package LLDB3/LLDB3TG L1 MINI-MELF Packing 2.5Kpcs / 7" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number Power Dissipation Repetitive Peak Forward Current Pulse Width= 20μsec Symbol PD IFRM RθJA TJ, TSTG Value 150 2 400 -40 to + 125 Units mW A °C/W °C
Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range
Electrical Characteristics
Type Number Break-over Voltage Break-over Voltage Symmetry Break-over Current Maxiumn Leakage Current Junction Capacitance Output Voltage Reverse Recovery Time (Note2) C= C= C= VR= 22nF 22nF 22nF 0.5V Symbol VBO + / -VBO IBO IR CJ VO Trr LLDB3TG 32 +/-2 100 10 22.0 5 1.5 LLDB3 32 +/-3 15 Units V V nA μA nF V μs
VR=0, f=1.0MHz
Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω
Version : B09
LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode
Small Signal Diode Rating and Sharacteristic Curves
ΔVF I(BO)F IB I(BO)R Δ IR=10m VB VF VBO VBO IBO VF IB VB IB :Break-Over Voltage at IBO : Test current for voltage VBO : Dynamic impedance at IF : Test current for voltage VB : Voltage at current IB : Test current for voltage VB
IF=10m VBO V
FIG 1 Admissible Power Dissipation Curve
160 1.08
FIG 2 Typical Junction Capacitance Junction Capacitance (pF)
1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 25 50 75 100 125
Power Dissipation (mW)
120
80
40
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Ambient Tempeatature (oC)
Reverse Voltage (V)
FIG 3 Peak pulse current versus duration Peak pulse current (A)
10
1
0.1
0.01 10 100
Trr (μs)
1000
10000
Version : B09
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