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LLDB3TG

LLDB3TG

  • 厂商:

    TSC

  • 封装:

  • 描述:

    LLDB3TG - 150mW Bi-directional Trigger Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
LLDB3TG 数据手册
LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode MINI-MELF (LL34) HERMETICALLY SEALED GLASS C Features Designed for through-Hole Device Type Mounting. Hermetically Sealed Glass. All external suface are corrosion resistant and terminals are readily solderable. High reliability glass passivation insuring parameter stability and protection against junction contamination. Pb free version and RoHS compliant A B D Mechanical Data Case :MINI-MELF hermetically sealedglass Terminal: Pure tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 270 °C/10s Polarity : Indicated by cathode band Weight : 29 ± 2.5 mg Dimensions A B C D Unit (mm) Min 3.30 1.40 0.25 1.25 Max 3.70 1.60 0.40 1.40 Unit (inch) Min Max 0.130 0.146 0.055 0.063 0.010 0.016 0.049 0.055 Ordering Information Part No. Package LLDB3/LLDB3TG L1 MINI-MELF Packing 2.5Kpcs / 7" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Forward Current Pulse Width= 20μsec Symbol PD IFRM RθJA TJ, TSTG Value 150 2 400 -40 to + 125 Units mW A °C/W °C Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Electrical Characteristics Type Number Break-over Voltage Break-over Voltage Symmetry Break-over Current Maxiumn Leakage Current Junction Capacitance Output Voltage Reverse Recovery Time (Note2) C= C= C= VR= 22nF 22nF 22nF 0.5V Symbol VBO + / -VBO IBO IR CJ VO Trr LLDB3TG 32 +/-2 100 10 22.0 5 1.5 LLDB3 32 +/-3 15 Units V V nA μA nF V μs VR=0, f=1.0MHz Notes:1. Valid provided that electrodes are kept at ambient temperature Notes:2. Test Condition : IF=0.5A, RL=100Ω Version : B09 LLDB3-LLDB3TG 150mW Bi-directional Trigger Diode Small Signal Diode Rating and Sharacteristic Curves ΔVF I(BO)F IB I(BO)R Δ IR=10m VB VF VBO VBO IBO VF IB VB IB :Break-Over Voltage at IBO : Test current for voltage VBO : Dynamic impedance at IF : Test current for voltage VB : Voltage at current IB : Test current for voltage VB IF=10m VBO V FIG 1 Admissible Power Dissipation Curve 160 1.08 FIG 2 Typical Junction Capacitance Junction Capacitance (pF) 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 25 50 75 100 125 Power Dissipation (mW) 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Ambient Tempeatature (oC) Reverse Voltage (V) FIG 3 Peak pulse current versus duration Peak pulse current (A) 10 1 0.1 0.01 10 100 Trr (μs) 1000 10000 Version : B09
LLDB3TG
### 物料型号 - 型号:LLDB3/LLDB3TG L1 - 封装:MINI-MELF

### 器件简介 LLDB3-LLDB3TG是一款150mW的双向触发二极管,设计用于通过孔设备类型安装,采用密封玻璃封装,所有外部表面均具有耐腐蚀性,并且端子易于焊接。

### 引脚分配 极性由阴极带指示。

### 参数特性 - 最大额定值: - 功率耗散:150mW - 重复峰值正向电流:脉冲宽度=20秒 - 热阻(结到环境):400°C/W - 结和储存温度范围:-40到+125°C

- 电气特性: - 击穿电压:LLDB3TG为32V,LLDB3为32V - 击穿电压对称性:LLDB3TG为±2V,LLDB3为±3V - 击穿电流:LLDB3TG为100nA,LLDB3为15nA - 最大漏电流:10μA - 结电容:22.0nF - 输出电压:5V - 反向恢复时间:1.5秒

### 功能详解 该二极管具有高可靠性的玻璃钝化,确保参数稳定性和防止结污染。无铅版本,符合RoHS标准。

### 应用信息 适用于需要双向触发功能的电路,如电压稳定、触发电路等。

### 封装信息 - 封装类型:MINI-MELF密封玻璃 - 端子:纯锡镀层,无铅,符合MIL-STD-202方法208保证 - 尺寸: - A:最小3.30mm,最大3.70mm - B:最小1.40mm,最大1.60mm - C:最小0.25mm,最大0.40mm - D:最小1.25mm,最大1.40mm
LLDB3TG 价格&库存

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