MBR10H100CT_11

CREAT BY ART MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Pb RoHS COMPLIANCE Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply - output rectification, power management, instrumentation Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds,0.25", (6.35mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position:Any Mounting torque: 5 in. - lbs, max Weight: 1.88 grams Dimensions in inches and (millimeters) Marking Diagram MBR10HXXCT = Specific Device Code G Y WW = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC Method) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: (Note 2) IF=5A, TA=25℃ IF=5A, TA=125℃ IF=10A, TA=25℃ IF=10A, TA=125℃ Maximum Instantaneous Reverse Current at Rated DC Blocking Voltage @ TA=25 ℃ @ TA=125 ℃ Voltage Rate of Change (Rated VR) Maximum Typical Thermal Resistance Operating Junction Temperature Range Storage Temperature Range Note 1: 2.0uS Pulse Width, f=1.0 KHz Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle Symbol VRRM VRMS VDC IF(AV) IFRM IFSM IRRM MBR 10H100CT 100 70 100 MBR 10H150CT 150 105 150 10 10 120 1.0 MBR 10H200CT 200 140 200 Units V V V A A A 0.5 0.88 0.75 0.97 0.85 5 1 10,000 1.5 - 65 to + 175 - 65 to + 175 A 0.85 VF 0.75 0.95 0.85 IR dV/dt RθJC TJ TSTG V uA mA V/us O C/W O O C C Version:F11 RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT) FIG.1- FORWARD CURRENT DERATING CURVE 12 AVERAGE FORWARD A CURRENT (A) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 CASE TEMPERATURE ( oC) RESISTIVE OR INDUCTIVELOAD 180 150 120 90 60 30 0 1 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3mS Single Half Sine Wave JEDEC Method PEAK FORWARD SURGE A CURRENT (A) 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3 TYPICAL FORWARD CHARACTERISRICS 1000 INSTANTANEOUS REVERSE A CURRENT (mA) TA=25℃ PULSE WIDTH=300uS 1% DUTY CYCLE FIG. 4- TYPICAL REVERSE CHARACTERISTICS 10 1 TA=125℃ 0.1 TA=75℃ INSTANTANEOUS FORWARD A CURRENT (A) 100 TA=125℃ 10 TA=25℃ 1 0.01 0.001 TA=25℃ 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 FORWARD VOLTAGE (V) 0.0001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 5- TYPICAL JUNCTION CAPACITANCE 10000 JUNCTION CAPACITANCE (pF) A 100 FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 1000 TA=25℃ f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) 100 10 1 100 0.1 1 10 REVERSE VOLTAGE (V) 0.1 0.01 0.1 1 10 100 T-PULSE DURATION (sec) Version:F11