MBR16100

CREAT BY ART MBR1635 - MBR16150 16.0 AMPS. Schottky Barrier Rectifiers TO-220AC Pb RoHS COMPLIANCE Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260 ℃/10 seconds, 0.25"(6.35mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: JEDEC TO-220AC molded plastic body Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position:Any Mounting torque: 5 in. - lbs, max Weight: 1.86 grams Dimensions in inches and (millimeters) Marking Diagram MBR16XX G Y WW = Specific Device Code = Green Compound = Year = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: (Note 2) IF=16A, T A=25℃ IF=16A, T A=125℃ Maximum Ilstantaneous Reverse Current @ T A=25 ℃ at Rated DC Blocking Voltage @ T A=125 ℃ Voltage Rate of Change (Rated V R) Typical Junction Capacitance Maximum Typical Thermal Resistance Operating Junction Temperature Range Storage Temperature Range Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Symbol VRRM VRMS VDC IF(AV) IFRM IFSM IRRM VF MBR 1635 35 24 35 MBR 1645 45 31 45 MBR 1650 50 35 50 MBR 1660 60 42 60 16 32 150 MBR 1690 90 63 90 MBR MBR 16100 16150 100 150 70 100 105 150 Units V V V A A A 1.0 0.63 0.57 0.5 15 0.75 0.65 0.5 10 10,000 500 3 - 65 to + 150 - 65 to + 175 0.5 0.85 0.75 0.3 7.5 0.95 0.92 0.1 5 A V mA mA V/uS pF O IR dV/dt Cj RθJC TJ TSTG C/W O O C C Version:G11 RATINGS AND CHARACTERISTIC CURVES (MBR1635 THRU MBR16150) FIG.1- FORWARD CURRENT DERATING CURVE 20 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 16 12 8 4 0 0 50 100 150 CASE TEMPERATURE (oC) RESISTIVE OR INDUCTIVELOAD 350 300 250 200 150 100 50 1 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3mS Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISRICS 100 INSTANTANEOUS REVERSE CURRENT (mA) FIG. 4- TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (A) 10 10 TA=125℃ Pulse Width=300us 1% Duty Cycle TA=125℃ 1 TA=25℃ 0.1 1 TA=25℃ 0.1 MBR1635-MBR1645 MBR1650-MBR1660 MBR1690-MBR16150 0.01 MBR1635-MBR1645 MBR1650-MBR16150 0.001 0 20 40 60 80 100 120 140 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) FIG. 5- TYPICAL JUNCTION CAPACITANCE 1 1.1 1.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10000 JUNCTION CAPACITANCE (pF) A TA=25℃ f=1.0MHz Vsig=50mVp-p 100 1000 TRANSIENT THERMAL IMPEDANCE (℃/W) 10 1 100 0.1 1 10 100 REVERSE VOLTAGE (V) 0.1 0.01 0.1 1 10 100 T-PULSE DURATION. (sec) Version:G11