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MBR20H100CT_09

MBR20H100CT_09

  • 厂商:

    TSC

  • 封装:

  • 描述:

    MBR20H100CT_09 - 20.0 AMPS. Schottky Barrier Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
MBR20H100CT_09 数据手册
MBR20H100CT – MBR20H200CT Pb RoHS RoHS COMPLIANCE 20.0 AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in power supply – output rectification, power management, instrumentation Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25”(6.35mm)from case Mechanical Data Cases: JEDEC TO-220AB molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% MBR Type Number Symbol 20H100CT Maximum Recurrent Peak Reverse Voltage VRRM 100 Maximum RMS Voltage VRMS 70 Maximum DC Blocking Voltage VDC 100 Maximum Average Forward Rectified Current O at Tc=125 C Peak Repetitive Forward Current (Rated VR, o Square Wave, 20KHz) at Tc=125 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at: o (Note 2) IF=10A, TC=25 C o IF=10A, TC=125 C o IF=20A, TC=25 C o IF=20A, TC=125 C Maximum Instantaneous Reverse Current o @ Tc =25 C at Rated DC Blocking Voltage o @ Tc=125 C (Note 2) Voltage Rate of Change (Rated VR) Maximum Typical Thermal Resistance (Note 3) MBR 20H150CT 150 105 150 20 20 150 MBR Units 20H200CT 200 V 140 V 200 V A A A 0.5 A V I(AV) IFRM IFSM IRRM VF 0.85 0.75 0.95 0.85 1.0 0.88 0.75 0.97 0.85 IR dV/dt RθJC 5 2.0 10,000 1.5 uA mA V/uS o C/W o Operating Junction Temperature Range -65 to +175 TJ C o Storage Temperature Range -65 to +175 TSTG C Notes: 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in Al-Plate. Version: C09 RATINGS AND CHARACTERISTIC CURVES (MBR20H100CT - MBR20H200CT) FIG.1- FORWARD CURRENT DERATING CURVE 20 150 RESISTIVE OR INDUCTIVE LOAD 16 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT. (A) Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method AVERAGE FORWARD CURRENT. (A) 125 100 75 12 8 50 4 25 0 0 25 50 0 75 100 125 o 150 175 1 10 NUMBER OF CYCLES AT 60Hz 100 CASE TEMPERATURE. ( C) 40 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 5 FIG.4- TYPICAL REVERSE CHARACTERISTICS PER LEG 10 1 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) Tj=125 0C Tj=125 0C 0.1 Tj=25 0C 1 Tj=75 0C 0.01 0.1 0.001 Tj=25 0C Pulse Width=300 s 1% Duty Cycle 0.01 0 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 20 40 60 80 100 120 140 FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE PER LEG 5,000 Tj=25 0C f=1.0MHz Vsig=50mVp-p FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG TRANSIENT THERMAL IMPEDANCE. ( OC/W) 100 JUNCTION CAPACITANCE.(pF) 2,000 10.0 1,000 500 1 200 100 0.1 1.0 10 100 REVERSE VOLTAGE. (V) 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) 10 100 Version: C09
MBR20H100CT_09 价格&库存

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