MMBD4148

MMBD4148

  • 厂商:

    TSC

  • 封装:

  • 描述:

    MMBD4148 - Surface Mount Switching Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
MMBD4148 数据手册
MMBD4148 Surface Mount Switching Diode Voltage Range 75 Volts 350m Watts Power Dissipation Features a a a a a a a a Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance Case: SOT-23, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: See diagram Marking: KA6, KA2, K5D Weight: 0.008 gram (approx.) SOT-23 0.020(0.51) 0.015(0.37) 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) Mechanical Data 0.080(2.05) 0.070(1.78) 0.024(0.61) 0.018(0.45) 0.120(3.05) 0.104(2.65) 0.041(1.05) 0.047(0.89) 0.043(1.10) 0.035(0.89) a Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25+ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol Value Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current Average Rectifier Output Current Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air Operating and Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IFM Io IFSM Pd R JA TJ, TSTG 100 75 53 300 200 2.0 1.0 350 357 -65 to + 150 0.006(0.15) 0.001(0.013) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) Units V V V mA mA A O mW C/W O C Electrical Characteristics Type Number Symbol Min Max Units V V Reverse Breakdown Voltage (Note 3) IR=100uA V(BR) 75 Forward Voltage IF=1.0mA 0.715 VF IF= 10mA 0.855 IF = 50mA 1.0 IF=150mA 1.25 Peak Reverse Current (Note 3) VR=75V 1.0 50 IR VR=75V, Tj=150+ 30 VR=25V, TJ=150+ 25 VR=20V Junction Capacitance (Note 3) VR=0, f=1.0MHz Cj 2.0 Reverse Recovery Time (Note 2) trr 4.0 Notes: 1. Device Mounted on Glass Epoxy PCB 1.6”x1.6”x0.06”, Mounting pad for the Cathode Lead Min. 0.93 inches. 2. Reverse Recovery Test Conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100 3. Short Duration Test Pulse used to Minimize Self-Heating Effect. uA nA pF nS - 168 - RATINGS AND CHARACTERISTIC CURVES ( MMBD4148) FIG.1- POWER DERATING CURVE FIG.2- TYPICAL FWD CHARACTERISTICS 500 1000 See Note 1 Pd, POWER DISSIPATION (mW) IR, LEAKAGE CURRENT (nA) 400 300 100 TA = +150 C O TA = +125 C O 200 10 TA = +75 C O 100 0.1 400 TA = +25 C O TA = -25 C O 0 0 100 TA, AMBIENT TEMPERATURE, ( C) O 200 600 800 1000 1200 VF, INSTANTANEOUS FORWARD VOLTAGE (mV) FIG.3- TYPICAL REVERSE CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT ( W) 10 1 VR = 75V VR = 20V 0.1 0.01 0.001 0.0001 0 50 100 150 O 200 Tj, JUNCTION TEMPERATURE ( C) - 169 -
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