MMBD4448H
Surface Mount Switching Diode
Voltage Range 80 Volts 350m Watts Power Dissipation
Features
Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance
0.020(0.51) 0.015(0.37)
SOT-23
0.055(1.40) 0.047(1.19)
0.098(2.50) 0.083(2.10)
Mechanical Data
Case: SOT-23, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: See diagram Marking: KA3 Weight: 0.008 gram (approx.)
0.080(2.05) 0.070(1.78) 0.024(0.61) 0.018(0.45) 0.120(3.05) 0.104(2.65)
0.041(1.05) 0.047(0.89)
0.043(1.10) 0.035(0.89) 0.007(0.178) 0.003(0.076)
0.006(0.15) 0.001(0.013)
0.024(0.61) 0.018(0.45)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol MMBD4448H
Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectifier Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IFM Io IFSM Pd RθJA TJ, TSTG 100 80 57 500 250 4.0 2.0 350 357 -65 to + 150
Units
V V V mA mA A mW K/W
O
C
Electrical Characteristics Type Number
Symbol
Min
80 0.62
Max
_
Units
V V
Reverse Breakdown Voltage (Note 2) IR=2.5uA V(BR) Forward Voltage IF=5.0mA IF= 10mA VF IF =100mA IF=150mA Peak Reverse Current (Note 2) VR=75V VR=75V, Tj=150℃ IR VR=25V, TJ=150℃ VR=20V Junction Capacitance VR=0.6V, f=1.0MHz Cj Reverse Recovery Time VR=6V, IF=5mA trr Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. tp < 300uS, Duty Cycle < 2%.
0.72 0.855 1.0 1.25 100 50 30 25 3.5 4.0
uA nA pF nS
_
_ _
- 844 -
RATINGS AND CHARACTERISTIC CURVES (MMBD4448H)
FIG.1- FORWARD CHARACTERISTICS FIG.2- LEAKAGE CURRENT VS JUNCTION TEMPERATURE
IF, INSTANTANEOUS FORWARD CURRENT (mA)
1000
10000
IR, LEAKAGE CURRENT (nA)
100
1000
10
100
1
0.1
10
VR =20V
0.01
0
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
2
1
0
100
Tj, JUNCTION TEMPERATURE ( C)
200
- 845 -
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