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MMBD4448H

MMBD4448H

  • 厂商:

    TSC

  • 封装:

  • 描述:

    MMBD4448H - Surface Mount Switching Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
MMBD4448H 数据手册
MMBD4448H Surface Mount Switching Diode Voltage Range 80 Volts 350m Watts Power Dissipation Features Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance 0.020(0.51) 0.015(0.37) SOT-23 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) Mechanical Data Case: SOT-23, Molded plastic Terminals: Solderable per MIIL-STD-202, Method 208 Polarity: See diagram Marking: KA3 Weight: 0.008 gram (approx.) 0.080(2.05) 0.070(1.78) 0.024(0.61) 0.018(0.45) 0.120(3.05) 0.104(2.65) 0.041(1.05) 0.047(0.89) 0.043(1.10) 0.035(0.89) 0.007(0.178) 0.003(0.076) 0.006(0.15) 0.001(0.013) 0.024(0.61) 0.018(0.45) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Maximum Ratings Type Number Symbol MMBD4448H Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Average Rectifier Output Current (Note 1) Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S Power Dissipation (Note 1) Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range VRM VRRM VRWM VR VR(RMS) IFM Io IFSM Pd RθJA TJ, TSTG 100 80 57 500 250 4.0 2.0 350 357 -65 to + 150 Units V V V mA mA A mW K/W O C Electrical Characteristics Type Number Symbol Min 80 0.62 Max _ Units V V Reverse Breakdown Voltage (Note 2) IR=2.5uA V(BR) Forward Voltage IF=5.0mA IF= 10mA VF IF =100mA IF=150mA Peak Reverse Current (Note 2) VR=75V VR=75V, Tj=150℃ IR VR=25V, TJ=150℃ VR=20V Junction Capacitance VR=0.6V, f=1.0MHz Cj Reverse Recovery Time VR=6V, IF=5mA trr Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature. 2. tp < 300uS, Duty Cycle < 2%. 0.72 0.855 1.0 1.25 100 50 30 25 3.5 4.0 uA nA pF nS _ _ _ - 844 - RATINGS AND CHARACTERISTIC CURVES (MMBD4448H) FIG.1- FORWARD CHARACTERISTICS FIG.2- LEAKAGE CURRENT VS JUNCTION TEMPERATURE IF, INSTANTANEOUS FORWARD CURRENT (mA) 1000 10000 IR, LEAKAGE CURRENT (nA) 100 1000 10 100 1 0.1 10 VR =20V 0.01 0 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 2 1 0 100 Tj, JUNCTION TEMPERATURE ( C) 200 - 845 -
MMBD4448H 价格&库存

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