MMBT2222ARFG

MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A F 1 Base 2 Emitter B E Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D G Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Marking Code : 1P Dimensions A B C D E F G Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 0.550 REF 0.022 REF Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel Marking 1P 1P SOT-23 MMBT2222A RF SOT-23 MMBT2222A RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal Resistance (Junction to Ambient) Junction and Storage Temperature Range (Note 1) Symbol PD VCBO VCEO VEBO IC RθJA TJ, TSTG Value 300 75 40 6 600 417 -55 to + 150 Units mW V V V mA °C/W °C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : A10 MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current IC= 10μA IC= 10mA IE= 10μA VCB= 60V VCE= 60V VEB= 3.0V VCE= 10V VCE= 10V DC current gain VCE= 10V VCE= 10V VCE= 10V Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Output capacitance Input capacitance Delay time Rise time Storage time Fall time VCE= 20V VCB= 10V VEB= 0.5V IE= 0 IB= 0 IC= 0 IE= 0 VBE(off) = 3.0V IC= 0 IC= 500mA IC= 150mA IC= 10mA IC= 1mA IC= 0.1mA VCE(sat) VBE(sat) fT Cobo Cibo td tr ts tf hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO Min 75 40 6 40 100 75 50 35 300 8 25 10 25 225 60 Max 0.01 0.01 0.01 300 1.0 2.0 V V MHz pF pF nS nS nS nS Units V V V μA μA μA IC= 500mA IB= 50mA IC= 500mA IB= 50mA IC= 20mA IE = 0 IC = 0 f= 100MHz f= 1.0MHz f= 1.0MHz VCC=30V VBE(off) =-0.5V IC=150mA IB1=15mA VCC=30V VBE(off) =-0.5V IC=150mA IB1=15mA VCC=30V IC=150mA IB1=-IB2=15mA VCC=30V IC=150mA IB1=-IB2=15mA Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B F W P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : A10 MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves 30 20 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 CAPACITANCE (pF) Cibo 10 5.0 Cobo 1.0 0 25 50 75 100 125 150 175 200 0.1 1.0 10 50 TA , AMBIENT TEMPERATURE (°C) Fig. 1 Max Power Dissipation vs Ambient Temperature REVERSE VOLTS (V) Fig. 2 Typical Capacitance 1000 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V TA = 125°C hFE, DC CURRENT GAIN 100 100 TA = -25°C TA = +25°C 10 10 VCE = 1.0V 1 0.1 1 10 100 1000 IC , COLLECTOR CURRENT (mA) Fig.3 Typical DC Current Gain vs Collector Current 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Fig. 4 Gain Bandwidth Product vs. Collector Current 0.5 VBE(ON) , BASE EMITTER VOLTAGE (V) 1.0 V E(SAT) , COLLECTOR TO EMITTER C SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 0.3 TA = 150°C 0.2 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VCE = 5V TA = -50°C TA = 25°C TA = 150°C 0.1 TA = -50°C 0 1 10 100 1000 IC , COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current 0.1 1 10 100 IC , COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current Version : A10