MMBT2907ARFG

MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A F 1 Base 2 Emitter B E Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D G Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Marking Code : 2F Dimensions A B C D E F G Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 0.550 REF 0.022 REF Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel Marking 2F 2F SOT-23 MMBT2907A RF SOT-23 MMBT2907A RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range Symbol PD VCBO VCEO VEBO IC TJ, TSTG Value 350 -60 -60 -5 -600 -55 to + 150 Units mW V V V mA °C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : A10 MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Base Cut-off Current IC= -10μA IC= -10mA IE= -10μA VCB= -50V VCE= -30V VCE= -30V VCE= -10V VCE= -10V DC current gain VCE= -10V VCE= -10V VCE= -10V Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Output Capacitance Intput Capacitance Delay time Rise time Storage time Fall time VCE= -20V VCB=-10V VEB=-2V VCE=-30V VCE=-30V VCE=-6V VCE=-6V IC= -150mA IC= -500mA IC= -150mA IC= -500mA IC= -50mA IE=0 IC=0 IC=-150mA IC=-150mA IC=-150mA IC=-150mA IE= 0 IB= 0 IC= 0 IE= 0 VBE(OFF)= -0.5V VBE(OFF)= -0.5V IC= -0.1mA IC= -1mA IC= -10mA IC= -150mA IC= -500mA IB= -15mA IB= -50mA IB= -15mA IB= -50mA f= 100MHz f= 100KHz f= 100KHz IB1=-15mA IB1=-15mA IB1=-IB2=-15mA IB1=-IB2=-15mA VCE(sat) VBE(sat) fT Cobo Cibo td tr ts tf hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IB Min -60 -60 -5 75 100 100 100 50 200 Max -20 -50 -50 300 -0.4 -1.6 -1.3 -2.6 8.0 30 10 40 80 30 V V MHz pF pF nS nS nS nS Units V V V nA nA nA Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B F W P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : A10 MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 VCE = 5V Collector-Emitter Saturation Voltage vs Collector Current 0.5 β = 10 0.4 0.3 0.2 0.1 0 125 °C - 40 °C 400 300 200 100 0 0.1 125 °C 25 °C 25 °C - 40 °C 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 300 1 10 100 I C - COLLECTOR CURRE NT (mA) 500 V BE( ON)- BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 °C Base Emitter ON Voltage vs Collector Current 1 0.8 0.6 0.4 0.2 0 0.1 - 40 °C 0.8 0.6 0.4 0.2 0 25 °C 25 °C 125 °C β = 10 125 °C VCE = 5V 1 10 100 I C - COLLECTOR CURRENT (mA) 500 1 10 I C - COLLECTOR CURRE NT (mA) 25 Collector-Cutoff Current vs Ambient Temperature I CBO - COLLE CTOR CURRENT (nA) 100 V CB = 35V 10 Input and Output Capacitance vs Reverse Bias Voltage 20 CAPACITANCE (pF) 16 12 C ib 1 8 4 0 0.1 C ob 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE (° C) 125 1 10 REVERSE BIAS VOLTAGE (V) 50 Version : A10