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MMBT3904RF

MMBT3904RF

  • 厂商:

    TSC

  • 封装:

  • 描述:

    MMBT3904RF - 300mW, NPN Small Signal Transistor - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
MMBT3904RF 数据手册
MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A F 1 Base 2 Emitter B E Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D G Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Marking Code : 1AM Dimensions A B C D E F G Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 Max 3.00 1.40 0.50 2.00 2.55 1.20 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 Max 0.118 0.055 0.020 0.079 0.100 0.043 0.550 REF 0.022 REF Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel Marking 1AM 1AM SOT-23 MMBT3904 RF SOT-23 MMBT3904 RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction and Storage Temperature Range Symbol PD VCBO VCEO VEBO IC TJ, TSTG Value 300 60 40 5 200 -55 to + 150 Units mW V V V mA °C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : B10 MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-offCurrent DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time VCE= 20V IC= 10μA IC= 1mA IE= 10μA VCB= 60V VCE= 30V VEB= 5V VCE= 1V VCE= 1V VCE= 1V IC= 50mA IC= 50mA IC= 10mA IE= 0 IB= 0 IC= 0 IE= 0 VBE(OFF)= 3V IC= 0 IC= 10mA IC= 50mA IC= 100mA IB= 5mA IB= 5mA f= 100MHz VCE(sat) VBE(sat) fT td tr ts tf hFE Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Min 60 40 6 100 60 30 250 Max 0.1 50 0.1 400 0.3 0.95 35 35 200 50 V V MHz nS nS nS nS Units V V V μA nA μA VCC=3V VBE=0.5V IC=10mA IB1=1.0mA VCC=3V VBE=0.5V IC=10mA IB1=1.0mA VCC=3V IC=10mA IB1=IB2=1.0mA VCC=3V IC=10mA IB1=IB2=1.0mA Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B F W P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : B10 MMBT3904 300mW, NPN Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves 500 400 125 °C V CE = 5V VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.15 β = 10 125 °C 300 25 °C 0.1 25 °C 200 100 0 0.1 - 40 °C 0.05 - 40 °C 1 10 I C - COLLECTOR CURRENT (mA) 100 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VBESAT- BASE-EMITTER VOLTAGE (V) - BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1 β = 10 Base-Emitter ON Voltage vs Collector Current 1 VCE = 5V 0.8 - 40 °C 25 °C 0.8 - 40 °C 25 °C 0.6 125 °C 0.6 125 °C 0.4 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 BE(ON) V 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Collector-Cutoff Current vs Ambient Temperature ICBO- COLLECTOR CURRENT (nA) 500 CAPACITANCE (pF) 10 Capacitance vs Reverse Bias Voltage f = 1.0 MHz 100 10 1 0.1 VCB = 30V 5 4 3 2 C obo C ibo 25 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Version : B10
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