MMBT3906

MMBT3906 Pb RoHS RoHS COMPLIANCE 0.3 Watts PNP Plastic-Encapsulate Transistors SOT-23 Features As complementary type, the NPN transistor MMBT3904 is recommended Epitaxial planar die construction Marking: 2A Dimensions in inches and (millimeters) Maximum Ratings Type Number TA=25 oC unless otherwise specified Symbol VCBO VCEO VEBO IC PC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current - continuous Collector Power dissipation ELECTRICAL CHARACTERISTICS Value -40 -40 -5 -0.2 0.3 Units V V V A W Parameter Collector-base breakdown voltage IC=-10uA, Ie=0 Collector-emitter breakdown voltage IC=-1mA, IB=0 Emitter-base breakdown voltage IE=-10uA, IC=0 Collector cut-off current VCB=-40V IE=0 Collector cur-off current VCE=-30V VBE(off)=-3V Emitter cut-off current VEB=--5V IC=0 DC current gain VCE=-1V IC=-10mA VCE=-1V IC=-50mA VCE=-1V IC=-100mA Collector-emitter saturation voltage IC=-50mA, IB=-5mA Base-emitter saturation voltage IC=-50mA, IB=-5mA Transition frequency VCE=-20V IC=-10mA f=100MHz Delay time VCC=-3V, VBE=-0.5V IC=-10mA Rise time IB1 =-1.0mA Storage time VCC=-3V, IC=-10mA Fall time IB1= IB2=-1.0mA Operating and Storage Temperature Range CLASSIFICATION OF hFE1 Symbol V(BR)CBO V(BR)CEO VBE(ON) ICBO ICEX IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT td tr ts tf MIN -40 -40 -5 MAX Units V V V uA nA 100 60 30 -0.1 -50 -0.1 300 -0.4 -0.95 250 35 35 225 75 -55 to + 150 TJ, TSTG V V MHz nS nS nS nS o C Rank Range O 100-200 Y 200-300 Version: A07 RATINGS AND CHARACTERISTIC CURVES (MMBT3906) Version: A07 RATINGS AND CHARACTERISTIC CURVES (MMBT3906) Version: A07