MMBT3906RF

MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A F 1 Base 2 Emitter B E Features Epitaxial planar die construction Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C D G Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Weight : 0.008gram (approximately) Marking Code : 2A Dimensions A B C D E F G Unit (mm) Min 2.70 1.20 0.30 1.78 2.20 0.95 Max 3.10 1.65 0.50 2.04 3.00 1.40 Unit (inch) Min 0.106 0.047 0.012 0.070 0.087 0.037 Max 0.122 0.065 0.020 0.080 0.118 0.055 0.550 REF 0.022 REF Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel Marking 2A 2A SOT-23 MMBT3906 RF SOT-23 MMBT3906 RFG Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Thermal resistance junction-ambient Junction and Storage Temperature Range Symbol PD VCBO VCEO VEBO IC RthJA TJ, TSTG Value 350 -40 -40 -5 -200 357 -55 to + 150 Units mW V V V mA °C/W °C Notes:1. Valid provided that electrodes are kept at ambient temperature Version : C10 MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode Electrical Characteristics Type Number Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Base Cut-off Current Emitter Base Cut-off Current IC= -10μA IC= -1mA IE= -10μA VCB= -30V VEB= -6V VCE= -1V VCE= -1V DC current gain VCE= -1V VCE= -1V VCE= -1V Collector-Emitter saturation voltage Base-Emitter saturation voltage Gain-bandwidth product Output capacitance Delay time Rise time Storage time Fall time VCE= -20V VCB= -5V Vcc=-3V IC= -10mA IC= -50mA IC= -10mA IC= -50mA IC= -10mA IE=0 VBE=-0.5V IC= -0.1mA IC= -1mA IC= -10mA IC= -50mA IC= -100mA IB= -1mA IB= -5mA IB= -1mA IB= -5mA f= 100MHz f= 1MHz Ic=-10mA IB1=-1.0mA Vcc=-3V Ic=-10mA IB1=IB2=-1.0mA VCE(sat) VBE(sat) fT Cobo td tr ts tf hFE IE= 0 IB= 0 IC= 0 Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -40 -40 -5 60 80 100 60 30 -0.65 250 -0.25 -0.4 -0.85 -0.95 4.5pF 35 35 225 75 nS nS nS nS MHz V V 300 Max -50 -50 Units V V V nA nA Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) P0 d T A C B F W P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 3.15 ±0.10 2.77 ±0.10 1.22 ±0.10 1.50 ± 0.10 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.229 ±0.013 8.10 ±0.20 12.30 ±0.20 W1 D D2 D1 Direction of Feed Version : C10 MMBT3906 350mW, PNP Small Signal Transistor Small Signal Transistor Rating and Characteristic Curves Version : C10 MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode Rating and Sharacteristic Curves Version : C10