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MUR160_1

MUR160_1

  • 厂商:

    TSC

  • 封装:

  • 描述:

    MUR160_1 - 1.0 AMPS. Glass Passivated High Efficient Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
MUR160_1 数据手册
MUR160 - MUR190 1.0 AMPS. Glass Passivated High Efficient Rectifiers DO-15 / DO-204AC Features D esigned for use in switching power supplies, inverters and as free wheeling diodes H igh efficiency, low VF H igh reliability U ltrafast recovery time for high efficiency o 1 75 C operating junction temperature M echanical Data C ases: Molded plastic E poxy: UL 94V-0 rate flame retardant L ead: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed P olarity: Color band denotes cathode H igh temperature soldering guaranteed: o 260 C /10 seconds/.375”,(9.5mm) lead lengths at 5 lbs.,(2.3kg) tension W eight: 0.34 grams Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current (Square Wave Note 4) @ T A=80 oC P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 1.0A Tj=150 oC Tj=25 oC M aximum DC Reverse Current @ T A=25 oC o at Rated DC Blocking Voltage @ T A=125 C M aximum Reverse Recovery Time ( Note 2 ) T ypical Junction Capacitance ( Note 1 ) T ypical Thermal Resistance (Note 3) O perating Temperature Range S ymbol V RRM V RMS V DC I(AV) IFSM VF IR T rr Cj R θJA TJ MUR160 6 00 4 20 6 00 1 .0 35 1 .05 1.25 5 .0 150 50 27 50 -65 to +175 -65 to +175 MUR190 900 630 900 U nits V V V A A 1.5 1.7 V uA uA nS pF o C/W o C o C 75 15 S torage Temperature Range T STG 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C. N otes: 2. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR=0.25A 3. Thermal Resistance from Junction to Ambient, with units Mounted on P.C. Board with 0.2” x 0.2” Copper Surface. 4. Pulse Test: Pulse Width = 300uS, Duty Cycle ?2.0%. Version: A06 RATINGS AND CHARACTERISTIC CURVES (MUR160 THRU MUR190) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE RATED VR O R JA = 50 C/W PEAK FORWARD SURGE CURRENT (A) 2 FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 40 1 30 20 0 0 50 TA, AMBIENT TEMPERATURE ( C) O 100 150 200 250 10 INSTANTANEOUS FORWARD CURRENT (A) 80 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS REVERSE LEAKAGE CURRENT ( A) MUR160 MUR190 0 1 10 100 NUMBER OF CYCLES AT 50 Hz 10 100 FIG.4- TYPICAL TYPICAL REVERSE LEAKAGE CHARACTERISTICS 10 1 Tj = 100 C 0.1 O 1 Tj = 100 C 0.1 O Tj = 25 C O 0.01 0 0.4 0.8 1.2 1.6 2.0 2.4 0.01 INSTANTANEOUS FORWARD VOLTAGE (V) Tj = 25 C 0 20 40 60 80 100 O FIG.5- TYPICAL JUNCTION CAPACITANCE 100 0.001 JUNCTION CAPACITANCE (PF) Tj = 25 C f = 1.0 MHz Vsig = 50m Vp-p O PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 MUR160 MUR190 1 0.1 1 10 100 REVERSE VOLTAGE (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
MUR160_1 价格&库存

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MUR160RLG
  •  国内价格
  • 1+1.01275
  • 10+0.97737
  • 100+0.87123
  • 500+0.85

库存:174