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RB495DRFG

RB495DRFG

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RB495DRFG - 40V, 350mA, SMD Schottky Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
RB495DRFG 数据手册
RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode 3 A SOT-23 F 1 2 B E Features Epitaxial planar die construction Surface device type mounting Mositure sensitivity level 1 Matte tin (Sn) lead finishe with Nickel (Ni) underplate Pb-free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code. C D H G Dimensions A B C D E F G H Unit (mm) Min 2.80 1.20 0.30 1.80 2.25 0.90 0.08 Max 3.00 1.40 0.50 2.00 2.55 1.20 0.19 Unit (inch) Min 0.110 0.047 0.012 0.071 0.089 0.035 0.003 Max 0.118 0.055 0.020 0.079 0.100 0.047 0.010 Mechanical Data Case : SOT- 23 small outline plastic package Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guranteed High temperature soldering guaranted: 260℃/10s Weight: 0.008 grams (approximate) Marking:D3Q 0.550 REF 0.022 REF Ordering Information Part No. RB495D RB495D Packing Code Package RF RFG SOT-23 SOT-23 Packing 3K / 7" Reel 3K / 7" Reel Marking D3Q D3Q Suggested PAD Layout 0.95 0.037 2.0 0.079 0.9 0.035 Maximum Ratings Rating at 25°C ambient temperature unless otherwise specified. 0.8 0.031 Maximum Ratings Type Number Power dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current Non-Repetitive Peak Forward Surge Current ( Note 1) Junction Temperature Storage Temperature Range Note 1: Mean output current per element: IO/2. Note 2: The suggested land pattern dimensions have been provided for reference only, as actual pad layouts may vary despending on application. Symbol PD VRRM VR IO IFSM TJ TSTG Value 200 40 25 350 1.5 125 -40 ~+125 Units mW V V mA A ℃ ℃ Version : E10 RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Electrical Characteristics Type Number Reverse Breakdown Voltage Forward Voltage Reverse Leakage Current Junction Capacitance IR= 100uA IF= 10mA IF= 200mA VR= 25V VR=0, f=1.0MHz Symbol V(BR) VF IR CJ Min 40 Max 0.32 0.55 70 50.0 Units V V uA pF Carrier & Reel specification TSC label Top Cover Tape Item Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol K D A D1 D2 E F P0 P1 T W W1 Dimension(mm) 2.40 Max. 1.50 +0.10 178 ± 1 50 Min. 13.0 ± 0.5 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.10 0.6 Max. 8.30 Max. 14.4 Max. Carieer Tape Any Additional Label (If Required) Macking W1 User direction of Feed A D2 D1 Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : E10 RB495D 40V, 350mA, SMD Schottky Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Typical Forward Characteristics 1000 1000 FIG 2 Reverse Current vs Reverse Voltage Ta=75°C 100 Forward Current (mA) Reverse Current (nA) 100 10 Ta=75° Ta=25°C Ta=25°C 10 1 1 0.1 0.01 0 0.2 0.4 0.6 0.8 0.1 0 10 20 30 40 50 60 70 80 90 100 Instantanceous Forward Voltage (V) Reverse Voltage (V) FIG 3 Admissible Power Dissipation Curve 250 70 60 FIG 4 Typical Junction Capacitance Power Dissipation (mW) 200 Total Capacitance (pF) 50 40 30 20 10 150 100 Macking 50 Reverse Voltage (V) 0 0 25 50 75 100 125 150 0 0 5 10 15 20 25 30 35 40 Ambient Temperature (°C) Reverse Voltage (V) Version : E10
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