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RB520S-30

RB520S-30

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RB520S-30 - 200mW, Low VF SMD Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
RB520S-30 数据手册
RB520S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-523F B Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Mechanical Data Case : SOD-523F small outline plastic package Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 1.68±0.5 mg Marking Code: B Dimensions A B C D E F Unit (mm) Min 0.70 1.50 0.25 1.10 0.60 0.10 Max 0.90 1.70 0.40 1.30 0.70 0.14 Unit (inch) Min Max 0.028 0.035 0.059 0.067 0.010 0.016 0.043 0.051 0.024 0.028 0.004 0.006 Ordering Information Part No. Packaging Code Package Packing Marking RB520S-30 RK SOD-523F 3K / 7" Reel B RB520S-30 RKG SOD-523F 3K / 7" Reel B Pin Configuration Suggested PAD Layout Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current @ TL=100℃ (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Storage Temperature Range Symbol PD VRRM VR IO IFSM RθJA TJ,TSTG B0520LW 200 30 30 200 1 500 -55 to + 125 Units mW V V mA A °C/W °C Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Version :A11 RB520S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Maximum Ratings Rating at 25°C ambient temperature unless otherwise specified. Type Number Reverse Breakdown Voltage IR= 500uA Forward Voltage IF= 200mA Reverse Leakage Current VR= 10V Symbol V(BR) VF IR Min 30 Max 0.60 1 Units V V μA Carrier & Reel specification TSC label Top Cover Tape Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension (mm) 3.15 ±0.10 3.94 ±0.05 1.35 ±0.10 1.75 ±0.10 178 ±1 54.4 ±0.40 13.0 ±0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.22 ±0.05 8.10 ±0.20 12.3 ±0.20 Carieer Tape Any Additional Label (If Required) P0 P1 d T A E F C B W W1 D D2 D1 User Direction of Feed Version : A11 RB520S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves Fig.1 Total Capacitance Fig.2 Forward Voltage vs Ambient Fig.3 Reverse Current vs Reverse Version : A11
RB520S-30 价格&库存

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RB520S-30
  •  国内价格
  • 1+0.07365
  • 100+0.06874
  • 300+0.06383
  • 500+0.05892
  • 2000+0.05646
  • 5000+0.05499

库存:4970

RB520S-30
  •  国内价格
  • 5+0.05774
  • 20+0.05249
  • 100+0.04724
  • 500+0.042
  • 1000+0.03955
  • 2000+0.0378

库存:7130

RB520S-30
  •  国内价格
  • 5+0.0714
  • 20+0.0651
  • 100+0.0588
  • 500+0.0525
  • 1000+0.04956
  • 2000+0.04746

库存:5215

RB520S-30
  •  国内价格
  • 1+0.05263
  • 100+0.04912
  • 300+0.04561
  • 500+0.04211
  • 2000+0.04035
  • 5000+0.0393

库存:322

RB520S-30
  •  国内价格
  • 20+0.08499
  • 200+0.07966
  • 600+0.07433
  • 3000+0.069

库存:231

RB520S-30
  •  国内价格
  • 50+0.075
  • 500+0.0675
  • 5000+0.0625
  • 10000+0.06
  • 30000+0.0575
  • 50000+0.056

库存:0

RB520S-30
  •  国内价格
  • 1+0.03834

库存:50

TPRB520S-30
  •  国内价格
  • 1+0.04714
  • 10+0.04326
  • 30+0.04249

库存:100

TCRB520S-30
  •  国内价格
  • 10+0.0752
  • 50+0.06956
  • 200+0.06486
  • 600+0.06016
  • 1500+0.0564
  • 3000+0.05405

库存:2885

RB520S-30-TP
  •  国内价格
  • 1+0.22499
  • 100+0.20999
  • 300+0.19499
  • 500+0.18
  • 2000+0.1725
  • 5000+0.168

库存:6769