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RB521S-30RK

RB521S-30RK

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RB521S-30RK - 200mW, Low VF SMD Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
RB521S-30RK 数据手册
RB521S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-523F B Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Mechanical Data Case : SOD-523F small outline plastic package Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 1.68±0.5 mg Marking Code: C Dimensions A B C D E F Unit (mm) Min 0.70 1.50 0.25 1.10 0.60 0.10 Max 0.90 1.70 0.40 1.30 0.70 0.14 Unit (inch) Min Max 0.028 0.035 0.059 0.067 0.010 0.016 0.043 0.051 0.024 0.028 0.004 0.006 Ordering Information Part No. Packaging Code Package Packing Marking RB521S-30 RK SOD-523F 3K / 7" Reel C RB521S-30 RKG SOD-523F 3K / 7" Reel C Pin Configuration Suggested PAD Layout Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current @ TL=100℃ (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature Range Symbol PD VRRM VR IO IFSM RθJA TJ TSTG Value 200 30 30 200 1 500 125 -55 to + 125 Units mW V V mA A °C/W °C °C Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Version :A11 RB521S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Maximum Ratings Rating at 25°C ambient temperature unless otherwise specified. Type Number Reverse Breakdown Voltage IR= 500uA Forward Voltage IF= 200mA Reverse Leakage Current VR= 10V Symbol V(BR) VF IR Min 30 Max 0.50 30 Units V V μA Carrier & Reel specification TSC label Top Cover Tape Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension (mm) 3.15 ±0.10 3.94 ±0.05 1.35 ±0.10 1.75 ±0.10 178 ±1 54.4 ±0.40 13.0 ±0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.22 ±0.05 8.10 ±0.20 12.3 ±0.20 Carieer Tape Any Additional Label (If Required) P0 P1 d T A E F C B W W1 D D2 D1 User Direction of Feed Version : A11 RB521S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves Version : A11
RB521S-30RK 价格&库存

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