RB521S-30RKG

RB521S-30RKG

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RB521S-30RKG - 200mW, Low VF SMD Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
RB521S-30RKG 数据手册
RB521S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-523F B Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code C A D E F Mechanical Data Case : SOD-523F small outline plastic package Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight : 1.68±0.5 mg Marking Code: C Dimensions A B C D E F Unit (mm) Min 0.70 1.50 0.25 1.10 0.60 0.10 Max 0.90 1.70 0.40 1.30 0.70 0.14 Unit (inch) Min Max 0.028 0.035 0.059 0.067 0.010 0.016 0.043 0.051 0.024 0.028 0.004 0.006 Ordering Information Part No. Packaging Code Package Packing Marking RB521S-30 RK SOD-523F 3K / 7" Reel C RB521S-30 RKG SOD-523F 3K / 7" Reel C Pin Configuration Suggested PAD Layout Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current @ TL=100℃ (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) Junction Temperature Storage Temperature Range Symbol PD VRRM VR IO IFSM RθJA TJ TSTG Value 200 30 30 200 1 500 125 -55 to + 125 Units mW V V mA A °C/W °C °C Note 1: Test Condition: 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Version :A11 RB521S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Maximum Ratings Rating at 25°C ambient temperature unless otherwise specified. Type Number Reverse Breakdown Voltage IR= 500uA Forward Voltage IF= 200mA Reverse Leakage Current VR= 10V Symbol V(BR) VF IR Min 30 Max 0.50 30 Units V V μA Carrier & Reel specification TSC label Top Cover Tape Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension (mm) 3.15 ±0.10 3.94 ±0.05 1.35 ±0.10 1.75 ±0.10 178 ±1 54.4 ±0.40 13.0 ±0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.22 ±0.05 8.10 ±0.20 12.3 ±0.20 Carieer Tape Any Additional Label (If Required) P0 P1 d T A E F C B W W1 D D2 D1 User Direction of Feed Version : A11 RB521S-30 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Characteristic Curves Version : A11
RB521S-30RKG
1. 物料型号: - 型号:RB521S-30 - 包装代码:RK和RKG,均采用SOD-523F封装,3K/7"卷装,标记代码为C。

2. 器件简介: - RB521S-30是一款200mW的低正向电压(VF)的表面贴装肖特基整流行二极管。

3. 引脚分配: - 文档中提供了引脚配置的图形,显示了二极管的阳极和阴极位置。

4. 参数特性: - 低功耗、高电流能力、低正向电压(VF) - 表面安装器件 - 潮湿敏感度等级1 - 无铅版本,符合RoHS标准 - 环保材料,包装代码和日期代码前缀为"G"

5. 功能详解: - 该二极管在25°C环境温度下的最大额定值,包括200mW的最大功耗、30V的重复峰值反向电压、30V的反向电压、200mA的均值正向电流@TL=100°C(引线温度)、1A的非重复峰值正向浪涌电流、500°C/W的热阻(结到环境)、125°C的结温、-55到+125°C的存储温度范围。

6. 应用信息: - 该二极管适用于需要低功耗、高电流能力和低正向电压的应用场合。

7. 封装信息: - 采用SOD-523F小外形塑料封装,引脚为无铅钝化,符合MIL-STD-202方法208的可焊性保证,高温焊接保证260°C/10s。
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