RB751V-40

RB751V-40

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RB751V-40 - 0.03AMP Surface Mount Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
RB751V-40 数据手册
RB751V-40 0.03AMP Surface Mount Schottky Barrier Diode SOD-323F 0.094(2.40) 0.102(2.60) Small surface mounting type High reliability Low reverse current and low forward voltage 0.073(1.85) 0.069(1.75) Features Mechanical Data 0.016(0.4) 0.008(0.2) 0.051(1.3) 0.047(1.2) 0.006(0.15) 0.002(0.05) 0.035(0.9) 0.031(0.8) Case: SOD-323F, Molded plastic Terminals: Pure tin plated, lead free. Solderable per MIL-STD-202, Method 208 Polarity: Cathode band Marking : Date Code and Type Code Type Code: SA Dimensions in inches and (millimeters) Weight: 0.01 gram Maximum Ratings TA=25 oC unless otherwise specified Type Number Symbol VRM VR Peak Reverse Voltage DC Reverse Voltage Mean Rectified Current Peak Forward Surge Current * Junction Temperature Storage Temperature Value 40 Units V V mA mA o C o C IO IFSM TJ TSTG 30 30 200 125 -40 to + 125 * 60 Hz for 1 Electrical Characteristics Type Number Reverse Leakage Current VR=30V Forward Voltage IF=1.0mA Capacitance between terminals VR=1V, f =1.0MHz * ESD sensitive product handling required. Symbol IR VF CT Min - Typ Max 0.5 0.37 2.0 Units mA V pF Version: A06 RATINGS AND CHARACTERISTIC CURVES (RB751V-40) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT (mA) 40 FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PER LEG PEAK FORWARD SURGE CURRENT. (mA) 8.3ms Single Half Sine Wave Per Leg (JEDEC Method) Tj=Tj max 30 200 20 100 10 0 0 50 100 150 TERMINAL TEMPERATURE ( C) 0 1 2 5 10 20 NUMBER OF CYCLES AT 60Hz 50 100 FIG.3- FORWARD CHARACTERISTICS 100 FIG.4- REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. (mA) 100 O INSTANTANEOUS FORWARD CURRENT.(mA) 10 TJ = 125 C 10 TJ = 75 C O 1 1 0.1 TJ = 25 C 0.1 O 0.01 0 0.1 0.2 FORWARD VOLTAGE. (V) 0.3 0.4 0.01 0 5 10 15 20 25 30 35 PERCENT OF RATED REVERSE VOLTAGE. (%) 10 F I G . 5 T Y P I C A L J U N C T I O N C A PA C I TA N C E TRANSIENT THERMAL IMPEDANCE. (OC/W) 100 TJ = 25 C f = 1 MHz O FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 100 J U N C T I O N C A PA C I TA N C E . ( p F ) 5 10 2 1 1 0.1 0.1 1 10 0.01 0.1 REVERSE VOLTAGE. (V) 1 10 T, PULSE DURATION. (sec) 100 Version: A06
RB751V-40
1. 物料型号: - 型号为RB751V-40,由台湾半导体公司生产。

2. 器件简介: - 该器件是一个0.03A表面贴装肖特基势垒二极管,封装类型为SOD-323F,符合RoHS标准。

3. 引脚分配: - 引脚为纯锡镀层,无铅,符合MIL-STD-202标准方法208的可焊性要求,极性标识为阴极带。

4. 参数特性: - 具有低反向电流和低正向电压特性,高可靠性,小型表面贴装类型。

5. 功能详解: - 该二极管的主要功能是整流,具有低反向电流和低正向电压的特性,使其适用于需要高效整流的应用。

6. 应用信息: - 由于其低反向电流和低正向电压的特性,适用于需要高效率整流的场合。

7. 封装信息: - 封装类型为SOD-323F,尺寸以英寸和毫米给出,具体尺寸未在文档中详细说明。
RB751V-40 价格&库存

很抱歉,暂时无法提供与“RB751V-40”相匹配的价格&库存,您可以联系我们找货

免费人工找货
RB751V-40
    •  国内价格
    • 50+0.0726
    • 500+0.06534
    • 5000+0.0605
    • 10000+0.05808
    • 30000+0.05566
    • 50000+0.05421

    库存:2950

    RB751V-40
    •  国内价格
    • 20+0.07207
    • 200+0.06742
    • 500+0.06277
    • 1000+0.05812
    • 3000+0.0558
    • 6000+0.05254

    库存:2700

    RB751V-40-5
    •  国内价格
    • 20+0.13035
    • 100+0.1185
    • 500+0.1106
    • 1000+0.1027
    • 5000+0.09322
    • 10000+0.08927

    库存:3700

    RB751V-40-TP
    •  国内价格
    • 5+0.2125
    • 20+0.19375
    • 100+0.175
    • 500+0.15625
    • 1000+0.1475
    • 2000+0.14125

    库存:0

    RB751V40,115
    •  国内价格
    • 5+0.11988
    • 20+0.1096
    • 100+0.09933
    • 500+0.08905
    • 1000+0.08426
    • 2000+0.08083

    库存:0

    RB751V-40TE-17
    •  国内价格
    • 1+0.32734
    • 10+0.30216
    • 30+0.29712
    • 100+0.28201

    库存:0

    RB751VM-40TE-17
    •  国内价格
    • 10+0.0639

    库存:2441