RB751V-40RR

RB751V-40RR

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RB751V-40RR - 200mW, Low VF SMD Schottky Barrier Diode - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
RB751V-40RR 数据手册
RB751V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323 Features Low power loss, high current capability, low VF Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Mechanical Data Case : SOD-323 small outline plastic package Terminal: Matte tin plated, lead free., solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed: 260°C/10s Polarity : Indicated by cathode band Weight :0.004 gram (approximately) Marking Code : 5 Dimensions A B C D E F G Unit (mm) Min 1.20 2.50 0.25 1.60 0.80 Max 1.40 2.80 0.35 1.80 0.90 Unit (inch) Min 0.047 0.098 0.010 0.063 0.031 Max 0.055 0.106 0.014 0.071 0.035 0.08 0.15 0.475 REF 0.003 0.006 0.19 REF Pin Configuration Ordering Information Package Part No. Packing 3K / 7" Reel 3K / 7" Reel Marking 5 5 0.63 0.025 0.83 0.033 Suggested PAD Layout SOD-323 RB751V-40 RR SOD-323 RB751V-40 RRG 1.60 0.063 2.86 0.113 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Repetitive Peak Reverse Voltage Reverse Voltage Mean Forward Current @ TL=100°C (Lead Temperature) Non-Repetitive Peak Forward Surge Current (Note 1) Thermal Resistance (Junction to Ambient) (Note 2) Junction and Storage Temperature Range Symbol PD VRRM VR IO IFSM RθJA TJ, TSTG Value 200 40 30 30 0.2 500 -45~125 Units mW V V mA A °C/W °C Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Notes:2. Valid provided that electrodes are kept at ambient temperature Version : B10 RB751V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Electrical Characteristics Type Number Forward Voltage Reverse Leakage Current Junction Capacitance IF= 1.0mA VR= 30V VR=0V, f=1.0MHz Symbol VF IR CJ Min 2 Max 0.37 0.5 Units V uA pF Tape & Reel specification TSC label Top Cover Tape Carieer Tape Any Additional Label (If Required) d T A F C B W P0 P1 E Item Carrier width Carrier length Carrier depth Sprocket hole Reel outside diameter Reel inner diameter Feed hole width Sprocke hole position Punch hole position Sprocke hole pitch Embossment center Overall tape thickness Tape width Reel width Symbol A B C d D D1 D2 E F P0 P1 T W W1 Dimension(mm) 1.7 ± 0.10 3.73 ± 0.10 1.68 ±0.10 1.5 ± 0.1 178 ± 1 55 Min 13.0 ± 0.20 1.75 ±0.10 3.50 ±0.05 4.00 ±0.10 2.00 ±0.05 0.23 ± 0.05 8.00 ±0.20 14.4 Max W1 D D2 D1 Version : B10 RB751V-40 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode Rating and Sharacteristic Curves FIG 1 Typical Forward Characteristics 100 0.4 FIG 2 Forward Current Derating Curve Io mean forward current (A) 1 IF Forward Current (mA) 10 Ta=25oC 0.32 0.24 1 0.16 0.1 0.08 0.01 0 0.2 0.4 0.6 0.8 0 0 25 50 75 100 125 150 VF Forward Voltage (V) Terminal Temperature (°C) FIG 3 Admissible Power Dissipation Curve 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 5 FIG 4 Typical Junction Capacitance Power Dissipation (mW) Junction Capacitance(pF) 4 3 2 1 0 0 5 10 15 20 25 Ambient Tempeatature (oC) Reverse Voltage (V) Version : B10
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