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RS2K

RS2K

  • 厂商:

    TSC

  • 封装:

  • 描述:

    RS2K - 2.0 AMPS. Surface Mount Fast Recovery Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
RS2K 数据手册
RS2A - RS2M 2.0 AMPS. Surface Mount Fast Recovery Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features F or surface mounted application G lass passivated junction chip B uilt-in strain relief, ideal for automated placement P lastic material used carries Underwriters Laboratory Classification 94V-0 F ast switching for high efficiency H igh temperature soldering: 260 oC / 10 seconds at terminals .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10) M echanical Data C ases: Molded plastic T erminals: P ure tin plated, Lead free. P olarity: Indicated by cathode band P acking: 12mm tape per EIA STD RS-481 W eight: 0.093 gram Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number Maximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current o See Fig. 1 @T L=100 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 2.0A M aximum DC Reverse Current o @ T A = 25 C at Rated DC Blocking o Voltage @ T A=125 C M aximum Reverse Recovery Time ( Note 1 ) T ypical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) O perating Temperature Range S ymbol V RRM V RMS V DC I(AV) IFSM VF IR T rr Cj R θJA R θJL TJ RS 2A 50 35 50 RS 2B 100 70 100 RS 2D 200 140 200 RS 2G 400 280 400 2 .0 50 1 .3 5 2 00 RS 2J 600 420 600 RS 2K 800 560 800 RS 2M 1000 700 1000 U nits V V V A A V uA uA 1 50 50 55 18 250 500 nS pF o -55 to +150 S torage Temperature Range T STG -55 to +150 1. Reverse Recovery Test Conditions: IF=0.5A, IR =1.0A, IRR =0.25A N otes: 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Thermal Resistance from Junction to Ambient and Junction to Lead Mounted on P.C.B. with 0.4” x 0.4” ( 10mm x 10 mm ) Copper Pad Areas. C /W o C o C Version: A06 RATINGS AND CHARACTERISTIC CURVES (RS2A THRU RS2M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 2.25 100 FIG.2- TYPICAL REVERSE CHARACTERISTICS AVERAGE FORWARD CURRENT. (A) 2.0 RESISTIVE OR INDUCTIVE LOAD INSTANTANEOUS REVERSE CURRENT. ( A) Tj=125 0C 1.5 10 1.0 P.C.B. MOUNTED 0.4 X 0.4" ( 10 X 10mm ) COPPER PAD AREAS 0.5 50 60 70 80 90 100 110 120 o 130 140 150 1 160 LEAD TEMPERATURE. ( C) 50 FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT TL=100 0C 8.3ms Single Half Sine Wave JEDEC Method Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 40 30 20 10 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 20 10 0 1 FIG.4- TYPICAL JUNCTION CAPACITANCE 90 Tj=25 0C f=1.0MHz Vsig=50mVp-p INSTANTANEOUS FORWARD CURRENT. (A) 10 NUMBER OF CYCLES AT 60Hz 100 1 JUNCTION CAPACITANCE.(pF) 50 0.1 Tj=25 0C Pulse Width=300 s 1% Duty Cycle 10 1 5 10 REVERSE VOLTAGE. (V) 50 100 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06

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