RS3A_1

RS3A - RS3M 3.0 AMPS. Surface Mount Fast Recovery Rectifiers SMC/DO-214AB .126(3.20) .114(2.90) .245(6.22) .220(5.59) Features F or surface mounted application G lass passivated junction chip B uilt-in strain relief, ideal for automated placement P lastic material used carries Underwriters Laboratory Classification 94V-0 F ast switching for high efficiency H igh temperature soldering: 260 oC /10 seconds at terminals .280(7.11) .260(6.60) .012(.31) .006(.15) .103(2.62) .079(2.00) .061(1.56) .050(1.26) .063(1.6) .039(1.0) .320(8.13) .305(7.75) .008(.20) .004(.10) M echanical Data C ases: Molded plastic T erminals: Pure tin plated, Lead free. P olarity: Indicated by cathode band P acking: 16mm tape per EIA STD RS-481 W eight: 0.21 gram Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current See Fig. 1 @T L=75 oC P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 3.0A M aximum DC Reverse Current @ T A = 25 oC at Rated DC Blocking Voltage @ T A =125 oC M aximum Reverse Recovery Time ( Note 1 ) T ypical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) O perating Temperature Range S torage Temperature Range S ymbol V RRM V RMS V DC I(AV) IFSM VF IR T rr Cj R θ JA R θJL TJ RS 3A 50 35 50 RS 3B 100 70 100 RS 3D 200 140 200 RS 3G 400 280 400 3 .0 1 00 1 .3 10 250 RS 3J 600 420 600 RS 3K 800 560 800 RS 3M 1000 700 1000 U nits V V V A A V uA uA 1 50 60 50 15 250 500 nS pF o C/W o o -55 to +150 C N otes: T STG -55 to +150 C 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A 2. Measured at 1 MHz and Applied V R =4.0 Volts 3. Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B. with 0.6” x 0.6” ( 16mm x 16 mm ) Copper Pad Areas. - 364 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (RS3A THRU RS3M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 100 FIG.2- TYPICAL REVERSE CHARACTERISTICS 3.0 AVERAGE FORWARD CURRENT. (A) 2.5 RESISTIVE OR INDUCTIVE LOAD INSTANTANEOUS REVERSE CURRENT. ( A) 2.0 Tj=125 0C 10 1.0 Tj=75 0C 1 P.C.B. MOUNTED 0.6 X 0.6" ( 16 X 16mm ) COPPER PAD AREAS 0 0 50 150 100 o LEAD TEMPERATURE. ( C) 200 Tj=25 0C 0.1 FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 PEAK FORWARD SURGE CURRENT. (A) Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method 0.01 125 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLT AGE. (%) 75 50 100 FIG.5- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 25 0 1 INSTANTANEOUS FORWARD CURRENT. (A) 10 NUMBER OF CYCLES AT 60Hz 100 0 Tj=125C FIG.4- TYPICAL JUNCTION CAPACIT ANCE 100 0 Tj=25C f=1.0MHz Vsig=50mVp-p 10 0 Tj=25C JUNCTION CAPACITANCE.(pF) 1 Tj=-40 0C Pulse Width=300 s 1% Duty Cycle 10 1 10 REVERSE VOLTAGE. (V) 100 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLT AGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07