S2A_1

S2A - S2M 2.0 AMPS. Surface Mount Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features For surface mounted application G lass passivated junction chip. Low forward voltage drop H igh current capability E asy pick and place H igh surge current capability P lastic material used carries Underwriters Laboratory Classification 94V-0 H igh temperature soldering: o 260 C / 10 seconds at terminals .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10) M echanical Data C ase: Molded plastic Terminals: Pure tin plated, lead free. P olarity: Indicated by cathode band P ackaging: 12mm tape per EIA STD RS-481 W eight: 0.093 gram Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current @TL =100 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 2.0A M aximum DC Reverse Current @ TA =25 C at Rated DC Blocking Voltage @ TA=125 oC M aximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal resistance (Note 3) O perating Temperature Range o Symbol S2A VRRM VRMS VDC I(AV) IFSM VF IR Trr Cj R θJL R θJA TJ S2B 100 70 100 S2D 200 140 200 S2G 400 280 400 2.0 50 1.15 S2J 600 420 600 S2K 800 560 800 S2M 1000 700 1000 Units V V V A A V uA uA uS pF o 50 35 50 Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A N otes: 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas. 5.0 125 2.0 30 16 53 -55 to +150 -55 to +150 C/W o o C C Version: A06 RATINGS AND CHARACTERISTIC CURVES (S2A THRU S2M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 2.0 Tj=125 0C FIG.2- TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT. ( A) 1.5 1 Tj=100 0C 1.0 SINGLE PHASE HALF SIZE WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD 10mm2 PAD AREAS 0.1 0.5 50 60 70 80 90 100 110 o 120 130 140 150 155 LEAD TEMPERATURE. ( C) 50 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method Tj=25 0C PEAK FORWARD SURGE CURRENT. (A) 0.01 0 20 40 60 80 100 120 140 40 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 30 20 FIG.5- TYPICAL FORWARD CHARACTERISTICS 10 10 0 100 60 FIG.4- TYPICAL JUNCTION CAPACITANCE INSTANTANEOUS FORWARD CURRENT. (A) 1 10 NUMBER OF CYCLES AT 60Hz 100 1 JUNCTION CAPACITANCE.(pF) 40 20 10 6 4 2 1 0.1 Tj=25 0C f=1.0MHz Vsig=50mVp-p 0.1 Tj=25 C PULSE WIDTH-300 S 2% DUTY CYCLE 0.01 0.4 0 0.2 0.4 1 2 4 10 20 40 100 0.6 0.8 1.0 1.2 1.4 1.6 REVERSE VOLTAGE. (V) FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06