S3GB

S3AB - S3MB 3.0 AMPS. Surface Mount Rectifiers SMB/DO-214AA .083(2.10) .077(1.95) .147(3.73) .137(3.48) Features For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: o 260 C / 10 seconds at terminals .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .209(5.30) .201(5.10) .008(.20) .004(.10) Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 W eight: 0.093 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current @TL =75 oC Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 3.0A Maximum DC Reverse Current @ TA =25 C at Rated DC Blocking Voltage @ TA=125 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range o S ymbol S3AB S3BB S3DB S3GB S3JB S3KB S3MB Units VRRM VRMS VDC I(AV) IFSM VF IR 50 35 50 100 70 100 200 140 200 400 280 400 3.0 80 1.15 10 250 2.5 40 10 -55 to +150 -55 to +150 600 420 600 800 560 800 1000 700 1000 V V V A A V uA uA uS pF o C/W o C o C T rr Cj RθJL TJ Storage Temperature Range TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Notes: 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Measured on P.C. Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas. - 464 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (S3AB THRU S3MB) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 3.5 FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 AVERAGE FORWARD CURRENT. (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 50 INSTANTANEOUS REVERSE CURRENT. ( A) Tj=125 0C 10 RESISTIVE OR INDUCTIVE LOAD P. C. BOARD MOUNTED ON 10mm2 PAD AREAS 60 70 80 90 100 110 120 130 o LEAD TEMPERATURE. ( C) 140 150 165 1 Tj=25 0C FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT. (A) 0.1 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 50 FIG.5- TYPICAL FORWARD CHARACTERISTICS 8.3ms Single Half Sine Wave JEDEC Method Tj=Tj max 10 100 INSTANTANEOUS FORWARD CURRENT. (A) 1 5 10 NUMBER OF CYCLES AT 60Hz 50 100 30 10 100 FIG.4- TYPICAL JUNCTION CAPACITANCE 3 1 JUNCTION CAPACITANCE.(pF) 50 0.3 Tj=25 0C f=1.0MHz Vsig=50mVp-p 0.1 10 0.03 0.01 0.6 Tj=25 0C PULSE WIDTH-300 S 2% DUTY CYCLE 5 1 5 10 50 REVERSE VOLTAGE. (V) 100 0.7 .8 .9 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07