S4M

S4A - S4M 4.0 AMPS. Surface Mount Rectifiers SMC/DO-214AB .126(3.20) .114(2.90) .245(6.22) .220(5.59) Features F or surface mounted application G lass passivated junction chip. L ow forward voltage drop H igh current capability E asy pick and place H igh surge current capability P lastic material used carries Underwriters Laboratory Classification 94V-0 H igh temperature soldering: o 2 60 C / 10 seconds at terminals .280(7.11) .260(6.60) .012(.31) .006(.15) .103(2.62) .079(2.00) .061(1.56) .050(1.26) .008(.20) .004(.10) .063(1.6) .039(1.0) M echanical Data C ase: Molded plastic T erminals: Pure tin plated, lead free. P olarity: Indicated by cathode band P ackaging: 16mm tape per EIA STD RS-481 W eight: 0.21 gram .320(8.13) .305(7.75) Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current o @T L = 75 C P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 4.0A M aximum DC Reverse Current @ T A = 25 oC at Rated DC Blocking Volta g e @ o T A=125 C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) T ypical Thermal Resistance (Note 3) O perating Temperature Range S ymbol S 4A S 4B S 4D S 4G S 4J V RRM V RMS V DC I(AV) IFSM VF IR 50 35 50 100 70 100 200 140 200 400 280 400 4 .0 100 1 .15 600 420 600 S 4K 800 560 800 S 4M U nits 1000 V 700 V 1000 V A A V uA uA uS pF o T rr Cj R θJL R θJA TJ S torage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A N otes: 2. Measured at 1 MHz and Applied V R=4.0 Volts 3. Measured on P.C. Board with 0.6” x 0.6” (16mm x 16mm) Copper Pad Areas. 10 250 2.5 60 13 47 -55 to +150 -55 to +150 C /W o o C C - 468 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (S4A THRU S4M) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 4.5 AVERAGE FORWARD CURRENT. (A) 4.0 3.5 3.0 2.5 2.0 1.5 0 50 INSTANTANEOUS REVERSE CURRENT. ( A) FIG.2- TYPICAL REVERSE CHARACTERISTICS 100 Tj=125 0C 10 RESISTIVE OR INDUCTIVE LOAD P. C. BOARD MOUNTED ON 16mm2 PAD AREAS 60 70 80 90 100 110 120 130 o LEAD TEMPERATURE. ( C) 140 150 165 1 Tj=25 0C FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT. (A) 0.1 100 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLT AGE. (%) 50 FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 8.3ms Single Half Sine Wave JEDEC Method Tj=Tj max 10 30 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD CURRENT. (A) 1 5 10 50 100 10 FIG.4- TYPICAL JUNCTION CAPACIT ANCE 100 3 1 JUNCTION CAPACITANCE.(pF) 50 0.3 Tj=25 0C f=1.0MHz Vsig=50mVp-p 0.1 10 0.03 0.01 0.6 Tj=25 0C PULSE WIDTH-300 S 2% DUTY CYCLE 5 1 5 10 50 REVERSE VOLTAGE. (V) 100 0.7 0.8 0.9 1.0 1.2 1.4 1.6 FORWARD VOLT AGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A trr NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07