SD1002

S D1002 T HRU S D1006 1 .0A Surface Mount Schottky Barrier Rectifier V oltage Range 2 0 to 60 Volts 4 50m Watts Power Dissipation F eatures S chottky barrier chip G uard ring die construction for transient protection L ow power loss, high efficiency H igh surge capability H igh current capability and low forward voltage drop F or use in low voltage, high frequency inverters, free wheeling, and polarity protection application P lastic material: UL flammability Classification rating 94V-0 0.053(1.35) Max. S OD-123 0.022(0.55) Typ. Min. 0.152(3.85) 0.140(3.55) 0.112(2.85) 0.100(2.55) M echanical Data C ase: SOD-123, Plastic L eads: Solderable per MIIL-STD-202, Method 208 P olarity: Cathode Band M arking: Date Code and Type Code or Date Code only Type Code: SL W eight: 0.01 grams (approx.) 0.006(0.15) Typ. Min. 0.010(0.25) Min. 0.067(1.70) 0.55(1.40) 0.004(0.10) Max. D imensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 ℃ ambient temperature unless otherwise specified. M aximum Ratings T ype Number R epetitive Peak Reverse Voltage W orking Peak Reverse Voltage, DC Blocking Voltage R MS Reverse Voltage @ IR=1.0mA S ymbol V RRM V RWM VR SD 1002 SD 1003 SD 1004 SD 1006 U nits V V A A mW O 20 30 28 1.0 25 40 60 42 A verage Rectifier Output Current @ TL= 9 0 C N on-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) P ower Dissipation (Note 2) T ypical Thermal Resistance Junction to Ambient Air (Note 2) O perating and Storage Temperature Range O V R(RMS) Io I FSM Pd R θ JA T J , T STG VF 0 .45 450 2 22 - 65 to + 125 0 .50 0 .55 0 .70 C/W O C E lectrical Characteristics M aximum Forward Voltage (Note 1) R everse Leakage Current (Note 1) VR=40V, V R=40V, V R=4V, V R=4V, V R=6V, V R=6V, IF=1.0A V T yp TA=25 ℃ TA=100 ℃ TA=25 ℃ TA=100 ℃ TA=25 ℃ TA=100 ℃ M ax 1 .0 10 50 2 75 3 1 .0 mA mA uA mA uA mA IR _ 10 1 15 1.5 _ _ _ Cj 1 10 pF N otes: 1. Pulse Test: Pulse width = 300 us, Duty Cycle ≦ 2% . 2 . Valid Provided that Leads are Kept at Ambient Temperature at a Distance of 9.5mm from the case. J unction Capacitance VR=4V, f=1.0MHz - 46 - RATINGS AND CHARACTERISTIC CURVES (SD1002THRU SD1006 ) FIG.1- FORWARD CURRENT DERATING CURVE 1.0 5 FIG.2-TYPICAL FORWARD CHARACTERISTICS AVERAGE OUTPUT CURRENT. (A) 0.8 INSTANTANEOUS FORWARD CURRENT. (A) 4 0.6 3 0.4 2 0.2 Single Phase Half Wave 60Hz Resistive or Inductive Load 0 10 40 60 80 100 O 1 Tj= 25 C O Tj=125 C Pulse Width-300ms 2% Duty Cycle 0 0.5 INSTANTANEOUS FORWARD VOLTAGE. (V) 1.0 O 0 120 140 LEAD TEMPERATURE. ( C) FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 25 FIG.4- TYPICAL JUNCTION CAPACITANCE 1000 PEAK FORWARD SURGE CURRENT. (A) 20 8.3ms Single Half Sine-Wave JEDEC Method CAPACITANCE. (pF) Tj=25 C f =1MHz 15 100 10 5 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 10 0.1 1.0 10 100 REVERSE VOLTAGE. (V) FIG.5- TYPICAL SAFE OPERATING AREA 150 R( )JA=300OC /W Note 1 10.0 FIG.6- TYPICAL REVERSE CHARACTERISTICS AMBIENT TEMPERATURE. ( C) 125 INSTANTANEOUS REVERSE CURRENT. (mA) 1.0 Tj=75 C 100 0.1 75 Tj=25 C 0.01 50 25 1 10 REVERSE VOLTAGE. (V) 20 30 40 50 60 0.001 20 25 30 35 40 45 50 55 RATED PEAK REVERSE VOLTAGE. (V) 60 65 - 47 -