SDB13

SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C/ 10 seconds at terminals Small size, single installation lead solderable per MIL-STD-202 Method 208 .205(5.2) .195(5.0) DBS .047(1.20) .040(1.02) .404(10.3) .386(9.80) .335(8.51) .320(8.13) 45 0 .255(6.5) .245(6.2) .013(0.33) .0088(0.22) .130(3.30) .120(3.05) Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band .060(1.53) .040(1.02) .013(0.33) .003(0.076) Dimensions in inches and (millimeters) Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SDB SDB SDB SDB T ype Number 12 13 14 15 Maximum Ratings and Electrical Characteristics o SDB SDB SDB SDB 16 19 110 115 Units SDBS SDBS SDBS SDBS SDBS SDBS SDBS SDBS 12 13 14 15 16 19 110 115 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL (See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum DC Reverse Current @ TA =25 C at Rated DC Blocking Voltage @ TA=100 oC Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) o VRRM VRMS VDC I(AV) IFSM VF IR Cj R θJL RθJA TJ 20 14 20 30 21 30 40 28 40 50 35 50 1.0 30 60 42 60 90 63 90 100 70 100 150 105 150 V V V A A 0.5 0.4 10 0.75 5.0 50 28 88 0.80 0.1 0.5 0.95 V mA mA pF o C /W o o Operating Temperature Range -65 to +125 Storage Temperature Range TSTG Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.5” x 0.5” (12 mm x 12mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. -65 to +150 -65 to +150 C C Version: A06 RATINGS AND CHARACTERISTIC CURVES (SDB(S)12 THRU SDB(S)115) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 50 RESISTIVE OR INDUCTIVE LOAD SDBS12- SDBS14 SDBS15-SDBS115 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 40 30 0.5 20 10 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 130 o 0 140 150 160 170 1 LEAD TEMPERATURE. ( C) 1000 10 NUMBER OF CYCLES AT 60Hz 100 FIG.4- TYPICAL REVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 50 INSTANTANEOUS REVERSE CURRENT. (mA) Tj=25 0C INSTANTANEOUS FORWARD CURRENT. (A) 10.0 100 SDBS12-SDBS14 Tj=100 0C SDBS12-SDBS14 SDBS15-SDBS16 10 SDBS15-SDBS16 1 SDBS19-SDBS115 1 SDBS19-SDBS115 0.1 Tj=25 0C 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE SDBS12-SDBS14 0.01 0 20 40 60 SDBS15-SDBS115 80 100 120 140 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE. (OC/W) 400 Tj=25 0C f=1.0MHz Vsig=50mVp-p FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 100 JUNCTION CAPACITANCE.(pF) 10 100 1 10 0.1 .1 1.0 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE. (V) T, PULSE DURATION. (sec) Version: A06