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SF1001G_1

SF1001G_1

  • 厂商:

    TSC

  • 封装:

  • 描述:

    SF1001G_1 - 10.0 AMPS. Glass Passivated Super Fast Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
SF1001G_1 数据手册
SF1001G - SF1008G 10.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AB Features H igh efficiency, low VF H igh current capability H igh reliability H igh surge current capability Low power loss. F or use in low voltage, high frequency inventor, free wheeling, and polarity protection application M echanical Data C ase: TO-220AB Molded plastic E poxy: UL 94V-0 rate flame retardant T erminals: Pure tin plated, lead free. solderable per MIL-STD-202, Method 208 guaranteed P olarity: As marked H igh temperature soldering guaranteed: o 260 C/10 seconds .16”,(4.06mm) from case. W eight: 2.24 grams Dimensions in inches and (millimeters) M aximum Ratings and Electrical Characteristics R ating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SF SF SF S ymbol SF T ype Number M aximum Recurrent Peak Reverse Voltage M aximum RMS Voltage M aximum DC Blocking Voltage M aximum Average Forward Rectified Current .375 (9.5mm) Lead Length @TC = 100 oC P eak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) M aximum Instantaneous Forward Voltage @ 5.0A M aximum DC Reverse Current @ T A=25 oC at Rated DC Blocking Voltage @ T A=100 oC M aximum Reverse Recovery Time (Note 1) Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range SF SF SF SF 1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G U nits V V V A A V RRM V RMS V DC I(AV) IFSM VF IR 50 35 50 100 70 100 150 105 150 200 140 200 300 210 300 400 280 400 500 350 500 600 420 600 10.0 125 0.975 10.0 400 35 70 3.5 -65 to +150 -65 to +150 50 o 1.3 1.7 V uA uA nS pF C/W o C o C T rr Cj R θJC TJ S torage Temperature Range T STG N otes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. 3. Mounted on Heatsink Size of 2” x 3” x 0.25” Al-plate. Version: A06 RATINGS AND CHARACTERISTIC CURVES (SF1001G THRU SF1008G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) 20 16 12 8 4 0 FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT. ( A) 100 TJ=100 0C 10 TJ=75 0C 0 50 CASE TEMPERATURE. ( C) o 100 150 PEAK FORWARD SURGE CURRENT. (A) 150 120 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG TJ=125 0C 8.3ms Single Half Sine Wave JEDEC Method 1 TJ=25 0C 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 90 60 30 0 FIG.5- TYPICAL FORWARD CHARACTERISTICS PER LEG 100 INSTANTANEOUS FORWARD CURRENT. (A) 1 2 5 10 20 50 100 30 4G NUMBER OF CYCLES AT 60Hz F1 10 01 G 10 00 FIG.4- TYPICAL JUNCTION CAPACITANCE PER LEG 100 Tj=25 0C SF 3 1 90 G 08 10 SF G~ 07 10 SF 10 0 ~ 5G SF 10 06 G CAPACITANCE.(pF) 80 0.3 0.1 70 60 50 40 0.03 0.01 0.4 SF ~S SF 10 G 01 SF 10 05 G ~S ~S F1 4 00 G Tj=25oC Pulse Width=300 s 1% Duty Cycle F1 00 8G 1000 1 2 5 10 20 50 100 200 500 0.6 0.8 1.0 1.2 1.4 1.6 1.8 REVERSE VOLTAGE. (V) FORWARD VOLTAGE. (V) FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A DUT (-) PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 0 -0.25A (+) 50Vdc (approx) (-) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06
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