SK84C

SK84C

  • 厂商:

    TSC

  • 封装:

  • 描述:

    SK84C - 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
SK84C 数据手册
Preliminary SK82C - SK86C 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers Pb RoHS RoHS COMPLIANCE SMC/DO-214AB Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: o 260 C / 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.21 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Type Number SK SK 82C 83C Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL (See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @8.0A o Maximum DC Reverse Current @ TA =25 C o at Rated DC Blocking Voltage @ TA=100 C Typical Thermal Resistance ( Note 2 ) Operating Temperature Range Storage Temperature Range SK 84C 40 28 40 8.0 150 SK 85C 50 35 50 SK 86C 60 42 60 Units V V V A A VRRM VRMS VDC I(AV) IFSM VF IR R θJA 20 14 20 30 21 30 0.55 0.5 15 20 0.75 10 o V mA mA C /W o o TJ -55 to +125 -55 to +150 TSTG -55 to +150 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.6 x 0.6” (16.0 x 16.0mm) Copper Pad Areas. C C Version: A07 RATINGS AND CHARACTERISTIC CURVES ( SK82C THRU SK86C) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE RESISTIVEOR INDUCTIVE LOAD 8 PEAK FORWARD SURGE CURRENT. (A) 10 AVERAGE FORWARD CURRENT (A) 600 FIG.2-MAXIMUM NON-REPETIVE PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method 400 300 200 6 SK85 SK82 C-SK C-SK cycle 4 86C 84C 100 80 60 2 0 0 50 100 1 10 100 150 NUMBER OF CYCLES AT 60HZ LEAD TEMPERATURE.(OC) FIG.3-TYPICAL FORWARD CHARACTERISTICS 50 PULSE WIDTH=300 s 1%DUTY GYGLE FIG.4-TYPICAL REVERSE CHARACTERISTICS 20 10 INSTANEDLIS REVERSE CURRENT.(mA) INSTANTANEOUS FORWARD CURRENT(A) TJ=125 C O 10 SK82C-SK84C SK85C-SK86C 1 TJ=75 C O 1 0.1 0.1 0.01 TJ=25 C O SK82C-SK84C SK85C-SK86C 0.01 0 0.001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.5 140 120 0 100 80 60 20 40 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FORWARD VOLTAGE(V) FIG.5-TYPICAL JUNCTION CAPACITANCE 1000 Tj=25 C f=1.0MHZ Vsig=50mvp-p FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS TRANSCIENT THERMAL IMPEDANCE. ( C/W ) 100 o JUNCTION CAPACITSNCE(pF) 10 100 1 SK82C-SK84C SK85C-SK86C 10 1 10 1 REVERSE VOLTAGE.(V) 100 0.1 0.01 0.1 1 PULSE DURATION,(sec) 10 100 Version: A07
SK84C
1. 物料型号: - 型号:SK86C - 制造商:TAIWAN SEMICONDUCTOR - 封装:SMC/DO-214AB

2. 器件简介: - 该器件为表面贴装肖特基势垒整流器,主要用于表面贴装应用。 - 金属到硅整流器,多数载流子导电,低正向电压降。 - 易于拾取和放置,高浪涌电流能力。

3. 引脚分配: - 极性由阴极带表示。 - 引脚为焊锡镀层。

4. 参数特性: - 最大重复峰值反向电压(VRRM):60V - 最大RMS电压(VRMS):42V - 最大DC阻断电压(VDc):60V - 最大平均正向整流电流(AV):8.0A - 峰值正向浪涌电流(IFSM):150A(8.3ms单半正弦波叠加在额定负载上,JEDEC方法) - 最大瞬时正向电压(VF)@8.0A:0.75V - 最大DC反向电流(IR)@TA=25°C:0.5mA - 典型热阻(ROJA):20°C/W - 工作温度范围(TJ):-55°C至+150°C - 存储温度范围(TSTG):-55°C至+150°C

5. 功能详解: - 该器件采用外延结构,高温焊接:260°C/10秒在端子处。 - 塑料材料用于载体,UL实验室分类94V-0。

6. 应用信息: - 适用于电阻性或感性负载,对于电容性负载,电流需降低20%。

7. 封装信息: - 封装类型:塑封 - 尺寸:按照英寸和毫米标注 - 包装:每卷16mm胶带,符合EIA STD RS-481标准 - 重量:0.21克
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