SS12_1

SS12 THRU SS110 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals SMA/DO-214AC .062(1.58) .050(1.27) .111(2.83) .090(2.29) .187(4.75) .160(4.06) Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.064 gram .091(2.30) .078(1.99) .012(.31) .006(.15) .008(.20) .004(.10) .210(5.33) .195(4.95) .056(1.41) .035(0.90) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS SS SS SS Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum DC Reverse Current @ TA =25℃ at Rated DC Blocking Voltage @ TA=100℃ Maximum DC Reverse Current at VR=33V & TA=50℃ Typical Junction Capacitance (Note 3) Typical Thermal Resistance (Note 2) VRRM VRMS VDC I(AV) IFSM VF IR HTIR 12 20 14 20 13 30 21 30 14 40 28 40 15 50 35 50 1.0 30 SS 16 60 42 60 SS 19 90 63 90 SS 110 100 70 100 Units V V V A A 0.5 0.4 10 - 0.75 5.0 0.80 0.05 0.5 5.0 V mA mA uA pF ℃/W ℃/W ℃ ℃ Cj 50 RθJL 28 88 RθJA Operating Temperature Range TJ -65 to +125 -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. - 52 - RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS110) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1.0 50 RESISTIVE OR INDUCTIVE LOAD SS12- SS14 SS15-SS110 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 40 AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method 30 .50 20 10 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 120 130 o 0 140 150 160 170 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE. ( C) FIG.3- TYPICAL FORWARD CHARACTERISTICS 50 FIG.4- TYPICAL REVERSE CHARACTERISTICS 100 SS12-SS14 SS15-SS110 Tj=125 0C INSTANTANEOUS FORWARD CURRENT. (A) 10.0 INSTANTANEOUS REVERSE CURRENT. (mA) 10 Tj=150 0C 1 Tj=125 0C 1 Tj=25 0C 0.1 Tj=75 0C 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE SS12-SS14 SS15-SS16 SS19-SS110 0.01 Tj=25 C O 0.01 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE 400 Tj=25 0C f=1.0MHz Vsig=50mVp-p FIG.6- TYPICAL CAPACITANCE 200 180 160 C, CAPACITANCE (pF) NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF JUNCTION CAPACITANCE.(pF) 100 SS12-SS14 SS15-SS16 SS19-SS110 140 120 100 80 60 40 20 10 0 .1 1.0 REVERSE VOLTAGE. (V) 10 100 0 4 8 12 16 20 24 28 32 36 40 V R , REVERSE VOLTAGE (VOLTS) - 53 -