SS15

CREAT BY ART SMA/DO-214AC 1.0AMP Surface Mount Schottky Barrier Rectifier SS12 - SS115 Pb RoHS COMPLIANCE Features UL Recognized File # E-326243 For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering guaranteed: 260 ℃ /10s at terminals High reliability grade (ACE-Q101 qualified) Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Case: JEDEC SMA/DO-214AC Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packaging: 12 mm tape per EIA STD RS-481 Weight: 0.066 gram Dimensions in inches and (millimeters) Marking Diagram SS1X G Y M = Specific Device Code = Green Compound = Year = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A @ 25℃ @ 1.0A @100℃ Maximum Reverse Current @ Rated VR TA=25 ℃ T =100℃ A T =125 ℃ A Typical Junction Capecitance (Note 2) Typical Thermal Resistance (Note 3) Operating Temperature Range Storage Temperature Range Note1: Pulse Test with PW=300u sec, 1% Duty Cycle Symbol VRRM VRMS VDC IF(AV) IFSM SS 12 20 14 20 SS 13 30 21 30 SS 14 40 28 40 SS 15 50 35 50 1.0 30 SS 16 60 42 60 SS 19 90 63 90 SS 110 100 70 100 SS 115 150 105 150 Unit V V V A A VF 0.5 0.4 0.4 0.75 0.65 0.80 0.70 0.1 0.95 0.85 V mA mA mA pF O IR Cj RθjL RθjA TJ TSTG 10 - 5 50 28 88 2 C/W O O - 65 to + 125 - 65 to + 150 - 65 to + 150 C C Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C. Note3: Mount on Cu-Pad Size 5mm × 5mm on P.C.B. Version:G11 RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115) FIG.1 FORWARD CURRENT DERATING CUURVE AVERAGE FORWARD CURRENT (A) 1.2 1 RESISTIVE OR INDUCTIVE PEAK FORWARD SURGE CURRENT (A) 40 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine-Wave 0.8 0.6 0.4 0.2 0 50 60 70 SS12-SS14 SS15-SS115 30 20 10 0 80 90 100 110 120 130 140 LEAD TEMPERATURE (oC) 150 160 170 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 SS12-SS14 SS15-SS115 TA=125℃ 10 10 SS15-SS16 1 1 SS12-SS14 SS115 0.1 TA=75℃ 0.1 SS19-SS110 0.01 TA=25℃ 0.01 0 0.2 0.4 0.6 0.8 1 FORWARD VOLTAGE (V) 1.2 1.4 1.6 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 5 TYPICAL JUNCTION CAPACITANCE FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE 100 1000 SS12-SS14 SS15-SS16 SS19-SS115 TRANSIENT THERMAL IMPEDANCE (℃/W) CAPACITANCE (pF) 10 100 TA=25℃ f=1.0MHz Vslg=50mV 1 10 0.1 1 10 100 REVERSE VOLTAGE (V) 0.1 0.01 0.1 1 T-PULSE DURATION(s) 10 100 Version:G11