SS210

SS22 THRU SS210 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 2.0 Amperes Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals .082(2.08) .076(1.93) SMB/DO-214AA .147(3.73) .137(3.48) .187(4.75) .167(4.25) .012(.31) .006(.15) Mechanical Data Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093gram .103(2.61) .078(1.99) .012(.31) .006(.15) .056(1.41) .035(0.90) .208(5.28) .200(5.08) .008(.20) .004(.10) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS SS SS SS Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 2.0A Maximum DC Reverse Current @ TA =25℃ at Rated DC Blocking Voltage @ TA=100℃ Typical Junction Capacitance (Note 3) VRRM VRMS VDC I(AV) IFSM VF IR 22 20 14 20 23 30 21 30 24 40 28 40 25 50 35 50 2.0 50 SS 26 60 42 60 SS 29 90 63 90 SS 210 100 70 100 Units V V V A A 0.5 0.4 20 0.70 10.0 130 0.85 0.1 20 V mA mA pF ℃/W ℃/W ℃ ℃ Cj RθJL 17 Typical Thermal Resistance ( Note 2 ) 75 RθJA Operating Temperature Range TJ -65 to +125 -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4 x 0.4”(10 x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. - 54 - RATINGSAND CHARACTERISTIC CURVES (SS22 THRU SS210) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT. (A) 2.0 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 1.5 SS22-SS24 SS25-SS210 40 30 1.0 20 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 50 60 70 80 90 100 110 O 10 0 120 130 140 150 160 1 10 NUMBER OF CYCLES AT 60Hz 100 LEAD TEMPERATURE. ( C) FIG.3- TYPICAL FORWARD CHARACTERISTICS 50 FIG.4-TYPICALREVERSE CHARACTERISTICS 100 SS22-SS24 SS25-SS210 TJ=125 C 10 O INSTANTANEOUS FORWARD CURRENT. (A) TJ=125 C 10 O TJ=150 C 1 O INSTANTANEOUS REVERSE CURRENT. (mA) 1 TJ=75 C O TJ=25 C O 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE 0.1 0.01 TJ=25 C O SS22-SS24 SS25-SS26 SS29-SS210 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) 0.001 0 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 140 FIG.5-TYPICAL JUNCTION CAPACITANCE 400 FIG.6-TYPICAL CAPACITANCE 400 360 NOTE:TYPICAL CAPACITANCE AT 0 V = 320 pF JUNCTION CAPACITANCE.(pF) 100 C, CAPACITANCE (pF) Tj=25 C f=1.0MHz Vsig=50mVp-p O 320 280 240 200 160 120 80 10 0.1 SS29-SS210 SS22-SS24 SS25-SS26 1 REVERSE VOLTAGE. (V) 10 100 40 0 0 4 8 12 16 20 24 28 32 36 40 V R , REVERSE VOL TAGE (VOL TS) - 55 -