SS22_11

SS22_11

  • 厂商:

    TSC

  • 封装:

  • 描述:

    SS22_11 - 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
SS22_11 数据手册
creat by art 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Pb SS22 - SS215 RoHS COMPLIANCE Features For surface mounted application Easy pirk and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering: 260℃/10 seconds at terminals Green compound with suffix "G" on packing code & prefix "G" on datecode. Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.093 grams Dimensions in inches and (millimeters) Marking Diagram SS2X G Y M = Specific Device Code = Green Compound = Year = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL (See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) IF= 2 A @ 25 ℃ @ 100 ℃ Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capecitance (Note 2) Typical Thermal Resistance Operating Temperature Range Storage Temperature Range Note 1: Pulse Test with PW=300u sec, 1% Duty Cycle @ TA=25 ℃ @ TA=100℃ @ TA=125 ℃ Symbol VRRM VRMS VDC IF(AV) IFSM SS 22 20 14 20 SS 23 30 21 30 SS 24 40 28 40 SS 25 50 35 50 2 50 SS 26 60 42 60 SS 29 90 63 90 SS 210 100 70 100 SS 215 150 105 150 Units V V V A A VF 0.5 0.4 0.4 0.70 0.65 0.85 0.70 0.1 0.95 0.80 V mA mA mA pF O IR Cj RθJL RθJA TJ TSTG 10 - 5 130 17 75 5.0 C/W O O - 65 to + 125 - 65 to + 150 - 65 to + 150 C C Note 2: Measure at 1MHz and Applied Reverse Voltage of 4.0V D.C. Version:E11 RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215) 2.5 AVERAGE FORWARD a CURRENT (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 50 FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE A CURRENT (A) 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 2.0 1.5 1.0 0.5 0.0 50 60 70 80 90 100 110 120 130 140 150 160 LEAD TEMPERATURE .(oC) RESISTIVE OR INDUCTIVE LOAD SS22-SS24 SS25-SS215 40 30 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz FIG. 3- TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD A CURRENT (A) TA=25oC INSTANTANEOUS REVERSE A CURRENT (mA) 100 FIG. 4- TYPICALREVERSE CHARACTERISTICS SS22-SS24 SS25-SS215 10 TA=125℃ 10 SS25-SS26 1 1 SS22- SS29-SS210 0.1 TA=75℃ 0.1 SS215 PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 TA=25℃ 0.001 0 20 40 60 80 100 120 140 1.6 0.01 0 0.2 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE. (V) 1.4 PERCENT OF RATED PEAK REVERSE VOLYAGE(%) FIG. 5- TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE (pF) a FIG. 6- TYPICAL TRANSIENT THERMAL CHARCTERISTICS 100 TRANSIENT THERMAL IMPEDANCE (℃/W) TA25℃ f=1.0MHz Vsig=50mVp-p 10 100 1 10 0.1 SS29-SS215 SS22-SS24 SS25-SS26 0.1 10 100 1 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION. (sec) Version:E11
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