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TS10B01G_09

TS10B01G_09

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS10B01G_09 - Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers - Taiwan Semiconductor Comp...

  • 数据手册
  • 价格&库存
TS10B01G_09 数据手册
TS10B01G - TS10B07G Single Phase 10.0 Amps. Glass Passivated Bridge Rectifiers TS4B Features UL Recognized File # E-96005 Glass passivated junction Ideal for printed circuit board Reliable low cost construction Plastic material has Underwriters Laboratory Flammability Classification 94V-0 Surge overload rating to 150 amperes peak High case dielectric strength of 2000VRMS Isolated voltage from case to lead over 2500 volts. High temperature soldering guaranteed: 260oC / 10 seconds / 0.375”(9.5mm) lead length at 5 lbs (2.3Kg) tension .118(3.0)X45 0 .996(25.3) .972(24.7) .602(15.3) .579(14.7) .147(3.7) .130(3.3) .134(3.4) .122(3.1) .176(4.37) .156(3.96) .382(9.7) .366(9.3) .068(1.73) .060(1.52) .043(1.1) .035(0.9) .709(18) .669(17) .303(7.7) .287(7.3) .087(2.2) .071(1.8) .030(0.75) .022(0.55) Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Terminals: Leads solderable per MILSTD-750 Method 2026 Weight: 0.15 ounce, 4 grams Mounting torque: 5 in. lbs. max. Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number 01G 02G 03G Maximum Ratings and Electrical Characteristics Symbol TS10B TS10B TS10B TS10B TS10B TS10B TS10B Units 04G 05G 06G 07G Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current 50 35 50 100 70 100 200 140 200 400 280 400 10 150 600 420 600 800 560 800 1000 700 1000 V V V A A I(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @ 5.0A @ 10A Maximum DC Reverse Current @ TA=25 oC at Rated DC Blocking Voltage @ TA=125 oC Typical Thermal Resistance (Note) Operating Temperature Range IFSM VF 1.0 V 1.1 5.0 uA IR 500 uA o RθJC 1.4 C/W o TJ -55 to +150 C o Storage Temperature Range TSTG -55 to + 150 C Note: Thermal Resistance from Junction to Case with Device Mounted on 75mm x 75mm x 1.6mm Cu Plate Heatsink. - 702 - Version: D09 RATINGS AND CHARACTERISTIC CURVES (TS10B01G THRU TS10B07G) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT 10 100 AVERAGE FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. ( A) 7.5 5 10 Tj=125 0C 2.5 0 20 40 60 100 80 o CASE TEMPERATURE. ( C) 120 140 150 1 300 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER BRIDGE ELEMENT 0.1 0 20 40 60 Tj=25 0C 80 100 120 140 PEAK FORWARD SURGE CURRENT. (A) 250 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 200 150 100 50 0 1 2 4 6 10 20 40 60 100 100 FIG.5- TYPICAL FORWARD CHARACTERISTICS PER BRIDGE ELEMENT NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 1000 600 500 400 300 200 100 00.1 50 INSTANTANEOUS FORWARD CURRENT. (A) 10 JUNCTION CAPACITANCE.(pF) 1 Tj=25oC Pulse Width=300 s 1% Duty Cycle 0.1 Tj=25 0C 0.5 1 2 5 10 20 100 200 500 800 0.01 0.6 0.8 REVERSE VOLTAGE. (V) 1.0 1.2 1.4 1.6 FORWARD VOLTAGE. (V) 1.8 2.0 Version: D09
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