TS12N20CS

PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurf™ Drain-Source Voltage 20 Volt Current ID 12 Ampere Features 12A, 20V RDS(ON) =3.9mΩ at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor’s new low cost, state of the art MicroSurf™ lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. Internal Block Diagram D Ds g endin tP Paten G S Pin Configuration Standard Application MicroSurf™ for High Frequency DC-DC Converters Bottom: Bump Side Rev. 1 05/2003 -1- TSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) TA = 25°C unless otherwise noted Symbol VDSS VGSS ID Value 20 +12 6 25 Unit V V A A W °C PD TJ, TSTG 2.2 - 55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case RθJA RθJR RθJC 56 4.5 0.6 °C/ W °C/ W °C/ W TS12N20CS Electrical Specifications Characteristics Drain-Source Breakdown Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain to Drain Sense Leakage Static Drain-Source On-Resistance Drain Sense On-Resistance Gate Threshold Voltage Total Gate Charge Gate Resistance Output Capacitance Input Capacitance Reverse transfer capacitance Reverse Recovery time Source-Drain Diode Forward On-Voltage Source-Drain Diode On-State Drain Current Avalanche Energy UIS BVDSS IGGS IDSS IDDS RDS(on) RDSDS(on) VGS(th) Qg Rg Coss Ciss Crss trr TA = 25°C unless otherwise specified Symbol Conditions VGS = 0V, ID = 250µA VGS = ±12V, VDS =0V Tj=150°C, VDS =20V, VGS = 0V Tj=150°C, VDS =20V, VGS = 0V VGS = 4.5V, ID = 12A VGS = 4.5V, ID = 0.35A VDS =VGS , ID = 250uA VDS =20V, VGS = 4.5V, ID = 12A VDS =0V, f =1MHz VDS =20V, VGS =0V, f =1MHz VDS =20V, VGS =0V, f =1MHz VDS =20V, VGS =0V, f =1MHz If = 12A, di/dt =100A/us Tj=150°C Is= 12A, VGS =0V Min 20 ------------- Typ ----3.9 137 1.3 19.8 0.4 2.4 320 TBD -- Max Unit -±150 250 250 --------40 V nA uA uA mΩ mΩ V nC Ohms nF pF pF ns VSD -- 0.75 -- V ID(on) Eas VGS =4.5V, VDS =1V Single Pulse 10us, VDS>BVDSS 25 2.5 --- --- A mJ Rev. 1 05/2003 -2-