TS13002
High Voltage NPN Transistor
TO-92
Pin Definition: 1. Emitter 2. Collecto r 3 . Ba s e
PRODUCT SUMMARY
BVCEO BVCBO IC VCE(SAT) 400V 700V 0.2A 0.5V @ IC / IB = 100mA / 10mA
Features
● ● High Voltage High Speed Switching
Block Diagram
Structure
● ● Silicon Triple Diffused Type NPN Silicon Trans istor
Ordering Information
Part No.
TS13002C T B0 TS13002C T B0G TS13002C T A3 TS13002C T A3G
Package
TO-92 TO-92 TO-92 TO-92
Packi ng
1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo
Note: “G” denote for Gr een Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range DC Pulse
Symbol
VCBO VCEO VEBO IC PD TJ TSTG
Limit
700V 400V 9 0.2 0.5 0.6 +1 5 0 - 55 to +150
Unit
V V V A W
o o
C C
Thermal Performance
Parameter
Junction to Ambient Ther mal Resis tance
Symbol
R ӨJ A
Limit
122
Unit
o
C/W
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Version: B07
TS13002
High Voltage NPN Transistor
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA IC / IB = 200mA / 20mA Base- Emitter Saturation Voltage IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA VCE = 10V, IC = 10mA DC Current Gain Dynamic Frequency Output Capacitance VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 100mA, IB1 = IB2 = 20mA, tp = 25uS Duty Cycle ≤1% fT C ob tr tSTG tf 4 -----21 1.1 2 0.2 ---4 0.7 MHz pF VCE = 10V, IC = 100mA VCE = 10V, IC = 200mA BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE1 hFE2 hFE3 700 400 9 -------10 20 10 -----0.2 0.45 1 --------1 1 0.4 1 1.5 1 1.2 40 40 40 V V V V V uA uA
Conditi ons
Symbol
Mi n
Ty p
Max
Unit
Resist ive Load Switching Time (Ratings) Rise Time Storage Time Fall Time uS uS uS
Note : pulse test: pulse w idth ≤5mS, duty cycle ≤10%
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Version: B07
TS13002
High Voltage NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. Static C haract erist ics Figure 2. DC Current Gain
Figure 3. VCE(SAT) v.s. VBE(SAT
Figure 4. Power Derat ing
Figure 5. Reverse B ias SOA
Figure 6. Safety Operat ing Area
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Version: B07
TS13002
High Voltage NPN Transistor
TO-92 Mechanical Drawing
DIM A B C D E F G H
TO-92 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30( typ) 0.563( typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017
Marking Diagram
Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oc t, K=Nov , L=Dec) L = Lo t C ode
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Version: B07
TS13002
High Voltage NPN Transistor
Notice
Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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Version: B07
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