TS13002CTB0G

TS13002CTB0G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS13002CTB0G - High Voltage NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TS13002CTB0G 数据手册
TS13002 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 0.2A 0.5V @ IC / IB = 100mA / 10mA Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13002CT B0 TS13002CT B0G TS13002CT A3 TS13002CT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Note: “G” denote for Sb free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range DC Pulse Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 700V 400V 9 0.2 0.5 0.6 +150 - 55 to +150 Unit V V V A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Symbol RӨJA Limit 122 Unit o C/W 1 /5 Version: D07 TS13002 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA IC / IB = 200mA / 20mA Base-Emitter Saturation Voltage IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA VCE = 10V, IC = 10mA DC Current Gain Dynamic Frequency Output Capacitance VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 100mA, IB1 = IB2 = 20mA, tp = 25uS Duty Cycle ≤1% fT Cob tr tSTG tf 4 -----21 1.1 2 0.2 ---4 0.7 MHz pF VCE = 10V, IC = 100mA VCE = 10V, IC = 200mA BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE1 hFE2 hFE3 700 400 9 -------10 20 10 -----0.2 0.45 1 --------1 1 0.4 1 1.5 1 1 .2 40 40 40 V V V V V uA uA Conditions Symbol Min Typ Max Unit Resistive Load Switching Time (Ratings) Rise Time Storage Time Fall Time uS uS uS Note : pulse test: pulse width ≤5mS, duty cycle ≤10% 2 /5 Version: D07 TS13002 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3 /5 Version: D07 TS13002 High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H I TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 1.10 1.30 0.043 0.051 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Sb free (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4 /5 Version: D07 TS13002 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5 /5 Version: D07
TS13002CTB0G
物料型号: - 型号:TS13002 - 封装:TO-92

器件简介: - TS13002是一款高压NPN晶体管,由台湾半导体制造,符合Pb RoHS合规性。

引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base)

参数特性: - 集电区-基区击穿电压(BVCEO):400V - 集电区-基区反向击穿电压(BVCBO):700V - 发射极-基区击穿电压(VEBO):9V - 集电极电流(Ic):0.2A(直流) - 集电极功耗(PD):0.6W - 工作结温(TJ):+150°C - 工作结与存储温度范围(TSTG):-55至+150°C - 结到环境热阻(ROJA):122°C/W

功能详解: - 该晶体管具有高电压、高速开关特性,采用硅三重扩散结构。 - 它是NPN硅晶体管,适用于高压应用。

应用信息: - 产品规格如有变更,恕不另行通知,使用或销售这些产品用于医疗、救生或维持生命等应用的客户需自担风险。

封装信息: - 提供了TO-92封装的机械尺寸图纸,包括英寸和毫米单位的最小值和最大值。 - 还提供了标记图,显示了不同代码的含义,如月份代码和批次代码。
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