TS13003CT

TS13003CT

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS13003CT - High Voltage NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TS13003CT 数据手册
TS13003 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collecto r 3 . Ba s e TO-126 Pin Definition: 1. Emitter 2. Collecto r 3 . Ba s e PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 1.5A 0.8V @ IC / IB = 0.5A / 0.1A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Trans istor Ordering Information Part No. TS13003C T B0 TS13003C T B0G TS13003C T A3 TS13003C T A3G TS13003C K B0 Package TO-92 TO-92 TO-92 TO-92 TO-126 Packi ng 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo 1Kpcs / Bulk Note: “G” denote for Sb Free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation @ Tc= 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o Symbol VCBO VCEO VEBO DC Pulse TO-92 TO-126 IC Ptot TJ TSTG Limit 700V 400V 9 1.5 3 1.5 30 +1 5 0 - 55 to +150 Unit V V V A W o o C C Thermal Performance Parameter Junction to Ambient Ther mal Resis tance TO-92 TO-126 Symbol R ӨJ A Limit 122 90 Unit o C/W 1/ 6 Version: D07 TS13003 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff C urrent Collector-Emitter Satur ation Voltage* IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A Base- Emitter Saturation Voltage* IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A VCE = 5V, IC = 10mA DC Current Gain* Dynamic C haracteristics Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = IB2 = 0.2A, tp = 25uS Duty Cycle ≤1% fT C ob td tr tSTG tf 4 ------21 0.05 0.5 2 0.4 --0.2 1 4 0.7 MHz pF uS uS uS uS VCE = 10V, IC = 400mA VCE = 2V, IC = 1A hFE BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 700 400 9 -------6 20 8 -----0.25 0.5 1.2 --------1 1 0.5 1 3 1 1.2 40 40 40 V V V V V uA uA Conditi ons Symbol Mi n Ty p Max Unit Resist ive Load Switching Time (Ratings) * Note: pulse tes t: pulse w idth ≤300uS, duty cycle ≤2% 2/ 6 Version: D07 TS13003 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static C haract erist ics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derat ing Figure 5. Reverse B ias SOA Figure 6. Safety Operat ing Area 3/ 6 Version: D07 TS13003 High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30( typ) 0.563( typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 Marking Diagram Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oc t, K=Nov , L=Dec) L = Lo t C ode 4/ 6 Version: D07 TS13003 High Voltage NPN Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M TO-126 DIMEN SION MILLIMETER S INCH ES MIN MAX MIN MAX 3 ºC -3 ºC -3 ºC 3 ºC --3 ºC 3 ºC --3 ºC 3 ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86 Marking Diagram Y = Year Code M = Month C ode (A=Jan, B =Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oc t, K=Nov , L=Dec) L = Lo t C ode 5/ 6 Version: D07 TS13003 High Voltage NPN Transistor Notice Specifications of the produc ts displayed herein are s ubject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Infor mation contained herein is intended to pr ovide a product description only. N o license, express or implied, to any intellectual proper ty rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products , TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a par ticular purpose, merchantability, or infringement of any patent, copyright, or other intellectual proper ty right. The products shown herein are not designed for use in medical, life-saving, or life-sus taining applications . C ustomers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/ 6 Version: D07
TS13003CT
1. 物料型号: - TS13003CT B0:TO-92封装,1Kpcs/Bulk包装。 - TS13003CT BOG:TO-92封装,1Kpcs/Bulk包装。 - TS13003CT A3:TO-92封装,2Kpcs/Ammo包装。 - TS13003CT A3G:TO-92封装,2Kpcs/Ammo包装。 - TS13003CK B0:TO-126封装,1Kpcs/Bulk包装。 - 注意:“G”表示无锑(Sb Free)。

2. 器件简介: - TS13003是一款高电压NPN晶体管,符合RoHS合规性要求。

3. 引脚分配: - TO-126封装:1. Emitter(发射极)2. Collector(集电极)3. Base(基极)。 - TO-92封装:1. Emitter(发射极)2. Collector(集电极)3. Base(基极)。

4. 参数特性: - 集电极-基极电压(VCBO):700V - 集电极-发射极电压(VCEO):400V - 发射极-基极电压(VEBO):9V - 集电极电流(Ic):1.5A - 总功耗(Ptot):TO-92为1.5W,TO-126为30W - 工作结温(TJ):+150℃ - 工作结和存储温度范围(TSTG):-55至+150℃

5. 功能详解: - 该晶体管具有高电压和高速开关的特性,是硅三重扩散型NPN硅晶体管。

6. 应用信息: - 产品规格如有变更,恕不另行通知。TSC或其代表不承担任何错误或不准确的责任或责任。所含信息仅提供产品描述。此文档不授予任何知识产权许可。

7. 封装信息: - 提供了TO-92和TO-126两种封装的详细尺寸图,包括英寸和毫米单位的最小值和最大值。
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