TS13003HV_09

TS13003HV_09

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS13003HV_09 - High Voltage NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
TS13003HV_09 数据手册
TS13003HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 530V 900V 1.5A 0.5V @ IC / IB = 0.5A / 0.1A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13003HVCT B0 TS13003HVCT B0G TS13003HVCT A3 TS13003HVCT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Note: “G” denote for Halogen Free Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Maximum Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range DC Pulse Symbol VCBO VCEO VEBO IC PD Ptot TJ TSTG Limit 900V 530V 10 1.5 3 0.5 1.96 +150 - 55 to +150 Unit V V V A W W o o C C Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance Symbol R Ө JC R Ө JA Limit 64 248 Unit o o C/W C/W 1/5 Version: D07 TS13003HV High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 800V, IE = 0 VEB = 10V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A Base-Emitter Saturation Voltage IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A VCE = 10V, IC = 10mA DC Current Gain Dynamic Characteristics Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = IB2 = 0.2A, tp = 25uS Duty Cycle ≤1% fT Cob td tr tSTG tf 4 ------21 0.05 1.1 2 0.4 --0.2 -4 0.7 MHz pF uS uS uS uS VCE = 10V, IC = 400mA VCE = 10V, IC = 1A hFE BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 900 530 9 -------15 20 6 -----0.3 0.5 0.9 --------10 0.5 0.5 1 2 1 1 .2 40 40 40 V V V V V uA uA Conditions Symbol Min Typ Max Unit Resistive Load Switching Time (Ratings) Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2/5 Version: D07 TS13003HV High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/5 Version: D07 TS13003HV High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/5 Version: D07 TS13003HV High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: D07
TS13003HV_09
1. 物料型号: - TS13003HVCT B0:TO-92封装,1Kpcs/Bulk包装。 - TS13003HVCT BOG:TO-92封装,1Kpcs/Bulk包装。 - TS13003HVCT A3:TO-92封装,2Kpcs/Ammo包装。 - TS13003HVCT A3G:TO-92封装,2Kpcs/Ammo包装(G表示无卤产品)。

2. 器件简介: - TS13003HV是一款高压NPN晶体管,特点是高电压、高速开关,采用硅三重扩散型结构。

3. 引脚分配: - 1. 发射极(Emitter) - 2. 集电极(Collector) - 3. 基极(Base)

4. 参数特性: - 集电极-基极电压(VCBO):900V - 集电极-发射极电压(VCEO):530V - 发射极-基极电压(VEBO):10V - 集电极电流(Ic):1.5A - 集电极最大功耗(PD):0.5W - 总功耗(Ptot):1.96W - 工作结温(TJ):+150℃ - 工作结温和存储温度范围(TSTG):-55至+150℃

5. 功能详解: - 该晶体管具有高电压和高速开关的特性,适用于需要高压和快速响应的应用场合。

6. 应用信息: - 产品规格如有变更,恕不另行通知。使用这些产品的客户需自行承担在医疗、救生或维持生命等应用中使用或销售这些产品的风险,并同意因不当使用或销售导致任何损害对台湾半导体公司(TSC)进行全额赔偿。

7. 封装信息: - 采用的是TO-92封装,具体尺寸如下: - A(最小值):4.30mm,最大值:4.70mm,英寸:0.169,最大值:0.185 - B(最小值):4.30mm,最大值:4.70mm,英寸:0.169,最大值:0.185 - C(典型值):13.53mm,英寸:0.532 - D(最小值):0.39mm,最大值:0.49mm,英寸:0.015,最大值:0.019 - E(最小值):1.18mm,最大值:1.28mm,英寸:0.046,最大值:0.050 - F(最小值):3.30mm,最大值:3.70mm,英寸:0.130,最大值:0.146 - G(最小值):1.27mm,最大值:1.31mm,英寸:0.050,最大值:0.051 - H(最小值):0.33mm,最大值:0.43mm,英寸:0.013,最大值:0.017
TS13003HV_09 价格&库存

很抱歉,暂时无法提供与“TS13003HV_09”相匹配的价格&库存,您可以联系我们找货

免费人工找货