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TS13003MVCTA3G

TS13003MVCTA3G

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS13003MVCTA3G - High Voltage NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TS13003MVCTA3G 数据手册
TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 800V 1.5A 0.8V @ IC / IB = 1A / 0.25A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13003MVCT B0 TS13003MVCT A3 TS13003MVCT B0G TS13003MVCT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 2Kpcs / Ammo 1Kpcs / Bulk 2Kpcs / Ammo Note: “G” is denote Halogen Free Product. Absolute Maximum Rating (Ta = 25ºC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Tc=25ºC Operating Junction Temperature Operating Junction and Storage Temperature Range Thermal Resistance Junction to Case DC Pulse Symbol VCBO VCES VCEO VEBO IC PD TJ TSTG RθJC Limit 800 800 400 9 1.5 3 5.8 +150 - 55 to +150 21.5 Unit V V V V A W ºC ºC ºC/W 1 /6 Version: G07 TS13003MV High Voltage NPN Transistor Electrical Specifications (Tc = 25ºC unless otherwise noted) Parameter Static IC = 1mA, IE = 0, t=300uS Collector-Base Voltage IC = 1mA, IE = 0, Tc=125ºC, t=2uS IC = 1mA, IB = 0, t=300uS Collector-Emitter Sustaning Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0, Tc=125ºC, t=2uS IC = 10mA, IB = 0 IE = 1mA, IC = 0 VCE = 400V, IB = 0 VCB = 800V, IE = 0 VEB = 9V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A VCE = 2V, IC = 10mA VCE = 2V, IC = 400mA VCE = 2V, IC = 1A VCE = 2V, IC = 400mA, Tc=120ºC VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = IB2 = 200mA, tp = 25uS, Tc=25ºC Duty Cycle ≤1% VCC = 125V, IC = 0.4A, IB1 = 15mA, IB2 = 150mA, tp = 25uS, Tc=25 ºC Duty Cycle ≤ 1% VCC = 125V, IC = 0.4A, IB1 = 15mA, IB2 = 150mA, tp = 25uS, Tc=120 ºC Duty Cycle ≤ 1%, BVCES BVCEO BVEBO ICEO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE1 hFE2 hFE3 hFE4 BVCBO 800 830 830 830 400 9 --------15 20 6 15 --------0.1 0 .2 0.35 0 .6 ------------1 1 1 0.5 0.8 1.5 1.1 1 .3 -40 20 25 V V V uA uA uA V V Conditions Symbol Min Typ Max Unit Base-Emitter Saturation Voltage V DC Current Gain DC Current Gain Dynamic Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time Delay Time Rise Time Storage Time Fall Time Delay Time Rise Time Storage Time Fall Time fT Cob td tr tSTG tf td tr tSTG tf td tr tSTG tf 4 -------------- -21 0 .1 0.6 2 0.2 0.10 0.38 0.34 0.03 0.13 0.66 0.25 0.05 --0.2 1 4 0 .6 0.13 0.51 0.43 0.05 ----- MHz pF uS uS uS uS uS uS uS uS uS uS uS uS Resistive Load Switching Time (Ratings) Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2 /6 Version: G07 TS13003MV High Voltage NPN Transistor Electrical Characteristics Curve (Tc = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3 /6 Version: G07 TS13003MV High Voltage NPN Transistor Electrical Characteristics Curve (Tc = 25oC) Figure 7. Vces Curve Vces Test Circuit 4 /6 Version: G07 TS13003MV High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H I TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 1.10 1.30 0.043 0.051 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5 /6 Version: G07 TS13003MV High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6 /6 Version: G07
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