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TS13003_11

TS13003_11

  • 厂商:

    TSC

  • 封装:

  • 描述:

    TS13003_11 - High Voltage NPN Transistor - Taiwan Semiconductor Company, Ltd

  • 数据手册
  • 价格&库存
TS13003_11 数据手册
TS13003 High Voltage NPN Transistor TO-92 TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 1.5A 1V @ IC =0.5A, IB =0.1A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13003CT B0 TS13003CT B0G TS13003CT A3 TS13003CT A3G TS13003CK B0 Package TO-92 TO-92 TO-92 TO-92 TO-126 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo 1Kpcs / Bulk Note: “G” denote for Halogen free Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ Tc= 25 C Operating Junction Temperature Operating Junction and Storage Temperature Range o Symbol VCBO VCEO VEBO DC Pulse TO-92 TO-126 IC PTOT TJ TSTG Limit 700V 400V 9 1.5 3 1.5 30 +150 - 55 to +150 Unit V V V A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance TO-92 TO-126 Symbol RӨJA Limit 122 90 Unit o C/W 1/6 Version: G11 TS13003 High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage* IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 9V, IC = 0 IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A IC / IB = 1.5A / 0.5A Base-Emitter Saturation Voltage* IC / IB = 0.5A / 0.1A IC / IB = 1.0A / 0.25A VCE = 5V, IC = 10mA DC Current Gain* Dynamic Characteristics Frequency Output Capacitance Delay Time Rise Time Storage Time Fall Time VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 1A, IB1 = IB2 = 0.2A, tp = 25uS Duty Cycle ≤1% fT Cob td tr tSTG tf 4 ------21 0.05 0.5 2 0.4 --0.2 1 4 0.7 MHz pF uS uS uS uS VCE = 10V, IC = 400mA VCE = 2V, IC = 1A hFE BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 700 400 9 -------6 20 6 -----0.25 0.5 1.2 --------1 1 0.5 1 3 1 1.2 40 40 35 V V V V V uA uA Conditions Symbol Min Typ Max Unit Resistive Load Switching Time (Ratings) * Note: pulse test: pulse width ≤300uS, duty cycle ≤2% 2/6 Version: G11 TS13003 High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/6 Version: G11 TS13003 High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 13.53 (typ) 0.532 (typ) 0.39 0.49 0.015 0.019 1.18 1.28 0.046 0.050 3.30 3.70 0.130 0.146 1.27 1.31 0.050 0.051 0.33 0.43 0.013 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 4/6 Version: G11 TS13003 High Voltage NPN Transistor TO-126 Mechanical Drawing DIM ∝1 ∝2 ∝3 ∝4 A B C D E F G H I J K L M TO-126 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 3ºC -3ºC -3ºC 3ºC --3ºC 3ºC --3ºC 3ºC --0.150 0.153 3.81 3.91 0.275 0.279 6.99 7.09 0.531 0.610 13.50 15.50 0.285 0.303 7.52 7.72 0.034 0.041 0.95 1.05 0.028 0.031 0.71 0.81 0.048 0.052 1.22 1.32 0.170 0.189 4.34 4.80 0.095 0.105 2.41 2.66 0.045 0.055 1.14 1.39 0.045 0.055 1.14 1.39 -0.021 -0.55 0.137 0.152 3.50 3.86 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: G11 TS13003 High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: G11
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